2019
DOI: 10.1016/j.ceramint.2018.12.131
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Synthesis and characterization of carbon-poor SiC nanowires via vapor-liquid-solid growth mechanism

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Cited by 21 publications
(3 citation statements)
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“…Zhang et al manufactured SiC NWs by chemical vapor deposition, the method was limited by complex equipment and uncontrollable nanowire morphology 16 . Cheng et al used single‐crystal Si (100) wafer as the substrate and Ni as a catalyst for the growth of nanowires via pyrolysis of polycarbosilane (PCS), the method was limited by expensive raw material and it is very difficult to remove the residual metal catalyst 17 . In order to solve the above issues, essential efforts are still needed to make the entire preparation work more economically feasible and green.…”
Section: Introductionmentioning
confidence: 99%
“…Zhang et al manufactured SiC NWs by chemical vapor deposition, the method was limited by complex equipment and uncontrollable nanowire morphology 16 . Cheng et al used single‐crystal Si (100) wafer as the substrate and Ni as a catalyst for the growth of nanowires via pyrolysis of polycarbosilane (PCS), the method was limited by expensive raw material and it is very difficult to remove the residual metal catalyst 17 . In order to solve the above issues, essential efforts are still needed to make the entire preparation work more economically feasible and green.…”
Section: Introductionmentioning
confidence: 99%
“…Because the amount of Y2O3 is very low, there should be very small liquid drops formed in the substrate at the synthetization temperature. This indicates a typical mechanism of VLS growth, which is normally used for the growth of nanowires and nanowhiskers [21]. In this process, the vapored species condenses preferentially into the catalytic liquid drops and deposits serially from the supersaturated liquid drops.…”
Section: Resultsmentioning
confidence: 89%
“…The slope of the line for Reaction (2) was negative in Figure 1 , so increasing the temperature was helpful in forming ZrB 2 . Meanwhile, β -SiC content changed little, indicating that formation process of β -SiC through Reaction (3) had completed at a temperature lower than 1573 K, which was 150 K lower than that of Zhang [ 17 ] via molten-salt-assisted carbothermal reduction with silica fume and phenolic resin as raw materials and close to that of Guo [ 21 ] via nickel-catalyzed carbothermal reduction of polycarbosilane (PCS). The relative contents of ZrB 2 and β -SiC showed no obvious changes when further raising the temperature to 1773 K. The weight ratio of ZrB 2 to β -SiC was 72:28 ( Figure 2 b), which was close to the theoretical value of 74:26 calculated based on Reaction (1), suggesting that phase-pure ZrB 2 -SiC composite powders were synthesized at 1723 K. This temperature was 50 K lower than that in the traditional carbothermal reduction of zircon [ 9 ].…”
Section: Resultsmentioning
confidence: 99%