Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon 
Field-Effect Transistor

Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

doi:10.1007/s11664-018-6231-8

Cited by 19 publications

(5 citation statements)

References 53 publications

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“…As shown in Figure 9 b, Ti2p3/2 and Ti2p1/2 are the characteristic peaks of TiO 2 at the binding energy of 458.8 eV and 464.5 eV [ 64 , 65 ]. In the TMP (1:1)–TiO 2 complex, the characteristic peaks of TiO 2 were all shifted (redshifted) towards low binding energies by 0.15 eV and 0.17 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Modulation of the Structure of the Conjugated Polymer TMP and the Effect of Its Structure on the Catalytic Performance of TMP–TiO2 under Visible Light: Catalyst Preparation, Performance and Mechanism

et al. 2023

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The photocatalytic activity of titanium dioxide (TiO2) is largely hindered by its low photoresponse and quantum efficiency. TiO2 modified by conjugated polymers (CPs) is considered a promising approach to enhance the visible light responsiveness of TiO2. In this work, in order to investigate the effect of CP structural changes on the photocatalytic performance of TiO2 under visible light, trimesoyl chloride–melamine polymers (TMPs) with different structural characteristics were created by varying the parameters of the polymerisation process of tricarbonyl chloride (TMC) and melamine (M). The TMPs were subsequently composited with TiO2 to form complex materials (TMP–TiO2) using an in situ hydrothermal technique. The photocatalytic activity of TMP–TiO2 was evaluated by the degradation of rhodamine B (RhB). The results showed that the trend of the structure of the TMP with the reaction conditions was consistent with the visible light responsiveness of TMP–TiO2, and TMP (1:1)–TiO2 had the best photocatalytic activity and could degrade 96.1% of the RhB. In conclusion, our study provided new insights into the influence of the structural changes of TMPs on the photocatalytic activity of TMP–TiO2 under visible light, and it improves our understanding of how conjugated polymers affect the photocatalytic activity of TiO2 under visible light.

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Section: Resultsmentioning

confidence: 99%

Modulation of the Structure of the Conjugated Polymer TMP and the Effect of Its Structure on the Catalytic Performance of TMP–TiO2 under Visible Light: Catalyst Preparation, Performance and Mechanism

et al. 2023

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“…Another significant improvement due to iron and nitrogen codoping is charge transfer. The transport properties of Fe–N-GDY were investigated in detail by fabricating field-effect transistors on a SiO 2 /Si substrate. − Platinum electrodes were vapor-deposited on a single silicon wafer, and Fe–N-GDY material was sprayed on the silicon electrode sheet by inkjet printing to construct a field-effect transistor (FET), which is shown in Figure a. By utilizing a flexible substrate such as polydimethylsiloxane (PDMS), we can also assemble a printing FET device with the help of liquid-metal electrodes (eutectic gallium–indium, EGaIn) and an ionic liquid gate, as sketched in Figure b.…”

mentioning

confidence: 99%

A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics

Zhang

et al. 2020

J. Phys. Chem. Lett.

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The vigorous development of two-dimensional materials puts forward higher requirements for more effective modulation of physical properties. Here, we utilize simple treatments for the emerging graphdiyne (GDY) materials to achieve dual control of magnetic and electrical properties through Fe/N codoping. The as-prepared Fe–N-GDY is confirmed as a highly conductive ferromagnetic semiconductor. The Curie temperature close to 205 K endows the materials promising application prospects in spin-related devices. Benefiting from uniform Fe/N comodification and performance optimization, such material could be used as carbon-based conductive ink for printed devices, such as a printed field-effect transistor (FET), which achieves a high mobility of 215 cm2 V–1 s–1. Even when printing Fe–N-GDY ink to assemble flexible FETs with an ionic liquid gate, the excellent transfer characteristics can be maintained and demonstrate stability with temperature. Those results provide a facile way to modulate GDY’s properties and promote its application potential in large-area, multifunctional integrated electronic devices, including wearable devices.

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“…However, the high fabrication cost of these vacuum deposition processes limits their large-scale application. As a newly developed AOS fabrication method, solution processing techniques offer the possibility of depositing thin films in a simple printing or coating manner, enabling the fabrication of low-cost and high-performance electrical devices [3][4][5], and the chemical composition of AOS films is easy to control compared to other physical deposition methods [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping

Chen

et al. 2023

Coatings

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Highly stable metal oxide thin film transistors (TFTs) are required in high-resolution displays and sensors. Here, we adopt a tantalum cation (Ta5+) doping method to improve the stability of zinc–tin–oxide (ZnSnO) TFTs. The results show that Ta5+-doped TaZnSnO TFT with 1 mol% concentration exhibits excellent stability. Compared with the undoped device, the oxygen vacancy defects of TaZnSnO thin films reduce from 38.05% to 18.70%, and the threshold voltage shift (ΔVth) reduces from 2.36 to 0.71 V under positive bias stress. We attribute the improved stability to the effective suppression of the oxygen vacancy defects, which is confirmed by the XPS results. In addition, we also prepared TaInZnSnO TFT devices with 1 mol% Ta5+ doping concentration. Compared with the 1 mol% Ta5+-doped TaZnSnO TFTs, the μ increases two-fold from 0.12 to 0.24 cm2/Vs, and the Vth decreases from 2.29 to 0.76 V in 1 mol% Ta5+-doped TaInZnSnO TFT with an In:Zn:Sn ratio of 4:4:3, while the device remains highly stable with a ΔVth of only 0.90 V. The injection of Ta5+ provides a novel strategy for the enhancement of the stability in ZnSnO-based TFTs.

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Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor

Cited by 19 publications

References 53 publications

Modulation of the Structure of the Conjugated Polymer TMP and the Effect of Its Structure on the Catalytic Performance of TMP–TiO2 under Visible Light: Catalyst Preparation, Performance and Mechanism

Modulation of the Structure of the Conjugated Polymer TMP and the Effect of Its Structure on the Catalytic Performance of TMP–TiO2 under Visible Light: Catalyst Preparation, Performance and Mechanism

A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics

Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping

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