Synthesis and characterization of Fe-doped ZnO thin films deposited by chemical spray pyrolysis

Srinivasulu, T.; Saritha, K.; Reddy, K.T. Ramakrishna

doi:10.1016/j.moem.2017.07.001

Cited by 231 publications

(95 citation statements)

References 45 publications

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“…Crystalline ZnO is known to be a direct band gap material, and so n = 1 2 was used. The band gap can be determined by extending the linear portion of the hν versus (αhν) 2 plot, called the Tauc plot, to the x-axis [41,42].…”

Section: Electrical Conductivity Analysismentioning

confidence: 99%

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Lee

Jung

et al. 2020

Metals

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Zinc oxide (ZnO) is a wide-band-gap semiconductor that is promising for use as a transparent conductive oxide film. To date, to improve their optoelectrical properties, pristine ZnO films have been doped with metals using various techniques. In this study, nanostructured Cu-ZnO thin films were synthesized using a modified two-step radio frequency magnetron sputtering technique with separate ZnO and metallic Cu targets. Controlling the timing of the Cu/ZnO co-sputtering and ZnO-only sputtering steps afforded a significant change in the resulting nanostructures, such as uniform Cu-ZnO and broccoli-structured Cu-ZnO thin films. Using various measurement techniques, the influence of Cu doping was analyzed in detail. Furthermore, a crystal growth model for the formation of the broccoli-like clusters was suggested. The Cu-ZnO thin films synthesized using this technique demonstrate a highly improved conductivity with some loss in optical transmittance.

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Section: Electrical Conductivity Analysismentioning

confidence: 99%

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Lee

Jung

et al. 2020

Metals

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“…Value of the dislocation density was determined using When the dopant Na is introduced into ZnO lattice, the crystalline sizes have been varied. This indicates that crystallinity of the films modifies as the doping concentration increases and the lower value of dislocation density and strain indicates the good crystalline quality of the grown films [9]. The calculated structural parameters of Na: ZnO nanostructures are tabulated in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…By extrapolating the linear part of the Tauc plot shown in Fig 4b will give the values of the energy band gap (Eg) of the film [9]. The band gap for pure and Na: ZnO thin films was almost same and shows a slight variation.…”

Section: Optical Studiesmentioning

confidence: 99%

“…These materials may be applied as photocatalyst and sensors due to their promising piezoelectric and optical and nonlinear optical features [2][3][4][5][6]. Large exciton binding energy of 60 meV, a wide direct band gap about 3.37eV, nontoxic, and a relatively high melting point of 1975 °C, easy device fabrication, high optical transmittance, high thermal conductivity and high electron mobility has always made ZnO as a promising candidate for various applications [1][2][3][4][5][6][7][8][9]. In order to enhance and modulate the structural and optical properties of ZnO thin film to meet the ever-increasing technological demand, many approaches have been implemented.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

Deekshitha

Upadhya

Antony

et al. 2019

Materials Science in Semiconductor Processing

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“…It exhibits intrinsic n‐type semiconducting property due to oxygen vacancies and zinc interstitials. It exhibits several properties like large exciton binding energy, good transparency, high electron mobility, high thermal conductivity, and strong room‐temperature luminescence for various device applications like liquid crystal displays, transparent conducting electrodes in solar cells, light emitting diodes, thin film transistors, gas sensors, and spintronic applications . NiO is another wide band gap semiconductor that shows p‐type behaviour due to the vacancy at Ni 2+ sites.…”

Section: Introductionmentioning

confidence: 99%

Effect of 120 MeV Au⁹⁺ ion irradiation on the structure and surface morphology of ZnO/NiO heterojunction

Das

Biswal

Choudhary

et al. 2018

Surface & Interface Analysis

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ZnO/NiO thin films, each of thickness 100 nm, were deposited on Si(100) substrate by pulsed laser deposition method. The resulting heterojunction, ZnO/NiO/Si, was irradiated by 120 MeV Au 9+ ions and characterized by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and atomic force microscopy (AFM). The GIXRD confirmed the presence of both NiO and ZnO in the samples. Ion irradiation induced suppression of crystalline nature, and the recrystallization of the same occurred at the fluence of 1 × 10 13 ions cm −2 . The occurrence of most intense band at 302 cm −1 in Raman spectra corresponds to the symmetric stretching vibration of ZnO. The linear shift of stretching mode of ZnO with ion fluence could be associated with the effect of compressive stress in the material. AFM analysis of the films indicated that the rms roughness increased when the film is irradiated at a fluence of 1 × 10 12 ions cm −2 .Beyond this fluence, the value of roughness decreased up to fluence of 1 × 10 13 ions cm −2 and increased thereafter. To see the effect of the stress of buffer layer on the surface layer, we calculated the stress for NiO layer with ion fluence form the lattice parameter. Comparing the stress of buffer layer with roughness of surface layer at the given fluence, we can say that the compressive stress in the buffer layer could possibly control the roughness of the surface layer. KEYWORDS atomic force microscope, heterostructure, ion irradiation, stress 1 | INTRODUCTION Heterojunction devices, formed by combining semiconductors with different band gap and closely matching lattice parameters, have attracted much attention in optoelectronics. 1 ZnO is a wide-band gap (3.37 eV) semiconductor of the II-VI group. 2 It exhibits intrinsic n-type semiconducting property due to oxygen vacancies and zinc interstitials. It exhibits several properties like large exciton binding energy, 3 good transparency, 4 high electron mobility, 5 high thermal conductivity, 6 and strong room-temperature luminescence 7 for various device applications like liquid crystal displays, transparent conducting electrodes in solar cells, light emitting diodes, thin film transistors, gas sensors, and spintronic applications. 8 NiO is another wide band gap semiconductor that shows p-type behaviour due to the vacancy at Ni 2+ sites. NiO is widely used for applications such as transparent conductive films, 9 anode material, 10 and electrochromic devices. 11 Heterojunctions formed out of two layers (n-type ZnO and p-type NiO) can exhibit the potential of both the materials, in addition to the junction characteristics. In 2003, Ohta et al., 12 first reported the preparation of transparent NiO/ZnO heterojunction by pulsed laser deposition (PLD) combined with a solid-phase-epitaxy technique. Since then, many developments have been reported on the preparation and application of this heterojunction. These include methods like sol-gel spin coating, 13 chemical bath deposition, 4 hydrothermal method, 14and PLD. 15 On the application front, use of the hete...

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Synthesis and characterization of Fe-doped ZnO thin films deposited by chemical spray pyrolysis

Cited by 231 publications

References 45 publications

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

Effect of 120 MeV Au⁹⁺ ion irradiation on the structure and surface morphology of ZnO/NiO heterojunction

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Synthesis and characterization of Fe-doped ZnO thin films deposited by chemical spray pyrolysis

Cited by 231 publications

References 45 publications

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

Effect of 120 MeV Au9+ ion irradiation on the structure and surface morphology of ZnO/NiO heterojunction

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Effect of 120 MeV Au⁹⁺ ion irradiation on the structure and surface morphology of ZnO/NiO heterojunction