Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

Jang, Sung Kyu; Youn, Ji-Youn; Song, Young Jae; Lee, Sungjoo

doi:10.1038/srep30449

Cited by 141 publications

(101 citation statements)

References 62 publications

(65 reference statements)

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“…However, if the topmost layer is free of defects, one might expect that the reaction terminates after total conversion of the first layer, or proceeds layer by layer. This in itself could be a useful approach for producing large area h‐BN layers on top of graphene, and may be useful as a 2D gate dielectric, tunnel barrier, or for encapsulation of epitaxial graphene devices . Furthermore, based on the higher chemical reactivity of monolayer graphene on SiC, due to the influence of the buffer layer, we speculate that the substitution reaction proceeds faster on graphene monolayers compared to multilayers.…”

mentioning

confidence: 97%

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

Bradford

Shafiei

MacLeod

et al. 2019

Adv Materials Inter

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confidence: 97%

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

Bradford

Shafiei

MacLeod

et al. 2019

Adv Materials Inter

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“…[7][8][9][10] It is evident that there are common problems with impurities, and the presence of wrinkles and grain boundaries and the non-uniform thickness, which largely originate from the high nucleation density. 15 However, the out-of-plane EBD has been measured under different environmental conditions and by various electrode structures, such as the crossed electrode structure, [6][7][8][9][10] conductive atomic-force microscopy (C-AFM) 3,5,11 and probing systems. 12 To fairly compare the film quality, common conditions to evaluate the out-ofplane EBD must be maintained.…”

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confidence: 99%

Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

Hattori

Taniguchi

Watanabe

et al. 2016

Applied Physics Letters

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Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the most important methods to elucidate the insulating quality of h-BN. In this work, the EBD of high quality exfoliated singlecrystal h-BN was investigated using three different electrode structures under different environmental conditions to determine the ideal electrode structure and environment for EBD measurement. A systematic investigation revealed that EBD is not sensitive to contact force or electrode area but strongly depends on the relative humidity during measurement. Once the measurement environment is properly managed, it was found that the EBD values are consistent within experimental error regardless of the electrode structure, which enables the evaluation of the crystallinity of synthesized h-BN at the microscopic and macroscopic level by utilizing the three different electrode structures properly for different purposes.Following the many advances in the science and application of graphene and other two-dimensional (2D) materials, van der Waals (vdW) heterostructure devices formed by stacking atomically thin layered 2D crystals have attracted significant interest because of their fascinating electrical, optical and mechanical properties. The atoms connect to each other in a unit layer with strong covalent bonds, while each layer is stabilized by weak vdW forces, which enables a wide variety of stacking without the limitation of lattice mismatch at the interface.1 Hexagonal boron nitride (h-BN) with its wide band gap (5.2 -5.9 eV 2 ) has been commonly used as an ideal insulating material in vdW heterostructure devices. Because insulating properties are important in electrical device applications, especially for gate insulators in field-effect transistors, fundamental research on the electrical breakdown strength (EBD) in the out-of-plane direction has been conducted using small flakes that were mechanically exfoliated from high quality single crystals, and the EBD has been reported as ~10 -12 MV/cm. [3][4][5][6] Recently, the in-plane EBD has also been determined to be ~3 MV/cm, 4 suggesting strong anisotropy in EBD.For practical applications, the large-area synthesis of h-BN has been intensively studied using various methods.7-14 However, the out-of-plane EBD values for scalable h-BN are largely scattered and limited to ~4 MV/cm, which is lower than that of the exfoliated sample.7-10 It is evident that there are common problems with impurities, and the presence of wrinkles and grain boundaries and the non-uniform thickness, which largely originate from the high nucleation density. 15 However, the out-of-plane EBD has been measured under different environmental conditions and by various electrode structures, such as the crossed electrode structure, 6-10 conductive atomic-force microscopy (C-AFM) 3, 5, 11 and probing systems. 12 To fairly compare the film quality, com...

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“…1-3 Despite of the same atomic structure with graphene which has zero bandgap energy, it has wide bandgap energy of approximately 6 eV. [4][5][6][7] Synthesis of h-BN has attracted a great attention for its promising potential applications in 2D (opto-) electronics as an ideal insulting substrate 8,9 gate dielectrics, 10 and tunneling barriers since it is an atomically thin layered insulator with clean surface without dangling bonds and charged defects. It can be also utilized as a surface passivation layer because of its chemical inertness and high oxidization resistance.…”

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confidence: 99%

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

et al. 2017

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Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2). Structural, optical and electrical properties of the MOCVD-grown h-BN films were systematically investigated by various spectroscopic analyses and electrical conduction measurement. Based on the experimental findings including narrower X-ray photoelectron spectra, reduced intensity of the shoulder peaks in near edge X-ray absorption fine structure spectra, and decreased electrical conduction by more than three orders of magnitude when H2 carrier gas is employed, it was concluded that H2 has an advantage over N2 as the carrier gas for MOCVD growth of h-BN which is attributed to the healing of crystalline defects by etching and regrowth processes occurring under the pulsed source-injection mode.

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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

Cited by 141 publications

References 62 publications

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

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