Synthesis and Characterization of Hf_0.5Zr_0.5O₂ (HZO) Ceramic Target via Modified Solid-State Reaction Method

Abstract

Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2-doped HfO2 (also referred to as Hf0.5Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 °C and 1600 °C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 °C optimum for film growth.

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

“…where t is the grain size, K is a constant related to crystallite shape, typically taken as 0.9, 21,22) l is the X-ray wavelength (Cu source, l = 0.154 nm), and b is the FWHM of the XRD peak on the q 2 axis, represented in radians. The value of q in q cos is the diffraction angle, which can be represented in either degrees or radians.…”