Monitoring the body temperature with high accuracy provides a fast, facile, yet powerful route about the human body in a wide range of health information standards. Here, the first ever ultrasensitive and stretchable gold‐doped silicon nanomembrane (Au‐doped SiNM) epidermal temperature sensor array is introduced. The ultrasensitivity is achieved by shifting freeze‐out region to intrinsic region in carrier density and modulation of fermi energy level of p‐type SiNM through the development of a novel gold‐doping strategy. The Au‐doped SiNM is readily transferred onto an ultrathin polymer layer with a well‐designed serpentine mesh structure, capable of being utilized as an epidermal temperature sensor array. Measurements in vivo and in vitro show temperature coefficient of resistance as high as −37270.72 ppm °C−1, 22 times higher than existing metal‐based temperature sensors with similar structures, and one of the highest thermal sensitivity among the inorganic material based temperature sensors. Applications in the continuous monitoring of body temperature and respiration rate during exercising are demonstrated with a successful capture of information. This work lays a foundation for monitoring body temperature, potentially useful for precision diagnosis (e.g., continuous monitoring body temperature in coronavirus disease 2019 cases) and management of disease relevance to body temperature in healthcare.

Flexible and self-powered photodetectors (PDs) have become one of the most popular topics, attracting researchers in the field of optoelectronic applications. In this study, for the first time, we demonstrate partial discharge detection in a practical environment with a prepared flexible device. Poly­(vinylidene fluoride) (PVDF) is utilized as a highly transparent material in the UVC region, to create a flexible substrate with the antihumidity property. A detector that uses a mixed-halide perovskite (FAPbI3)1–x (MAPbBr3) x as the photoactive material is constructed in a vertical structure on the as-prepared hydrophobic PVDF substrate. The fabricated device exhibits good performance with a fast response speed (t rise = 82 ms, t fall = 64 ms) and a high detectivity of 7.21 × 1010 Jones at zero bias under 254 nm UV illumination, along with superior mechanical flexibility at various bending angles. Additionally, the air-exposure stability and reproducibility of the as-prepared device exhibit almost the original performance after 6 weeks of storage. For practical applications, we demonstrate a facile and sensitive detection for UVC leakage from a germicidal lamp and simulated a partial discharge system using our PD without energy consumption. These results indicate that this new approach may be useful and convenient for the detection of the partial discharge as well as for several practical applications.

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Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2-doped HfO2 (also referred to as Hf0.5Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 °C and 1600 °C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 °C optimum for film growth.