Synthesis and characterization of one-dimensional GaN nanostructures

Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H2

“…In addition GaN NWs have been obtained by the reaction of Ga:GaN [25], Ga:SiO 2 [26] and Ga:GaN:CNT [27] with NH 3 but also at temperatures as low as 650 1C using Ga:CaF 2 [28] or (CH 3 COCHCOCH 3 ) 3 Ga [29]. Finally it is worthwhile pointing out that GaN NWs have also been obtained via the nitridation of Ga 2 O 3 [30][31][32]. Most of these GaN NWs have been grown via the direct reaction of Ga with NH 3 using Ar as a carrier gas between 900 and 1100 1C on a broad variety of substrates e.g.…”

“…Most of these GaN NWs have been grown via the direct reaction of Ga with NH 3 using Ar as a carrier gas between 900 and 1100 1C on a broad variety of substrates e.g. 6H-SiC [24] Al 2 O 3 [26], LaAlO 3 [32], Si [27] using various catalysts such as InCl 3 [17], In, Fe [19], Ni [19], Au [21] and NiO [26]. The GaN NWs crystallise in the hexagonal wurtzite structure and their diameters typically vary between 10 and 50 nm.…”

High Alkaline Electrochemical Hydrogen Evolution on a Pt/GaN Heterostructure

“…As shown in Figure 1b, diffraction peaks are observed at 32.3°, 34.5°, 36.8°and 57.7°, which can be indexed to the crystal planes (100), (002), ( 101) and (110) of GaN, respectively (PDF#50-0792). [18] The appearance of these four typical peaks in the XRD patterns of Pt/GaN indicates the preservation of the GaN lattice structure after electrodeposition of Pt nanoparticles. Furthermore, the XRD patterns of Pt/GaN display diffraction signals at 39.7°and 46.2°corresponding to the (111), (200) crystal planes of cubic phased Pt (PDF#04-0802).…”

“…Then, Pt nanoparticles were imobilized on GaN through an electrodeposition process (see the details in the supporting information).The crystallinity and composition of the as‐prepared samples were analyzed by X‐ray diffraction (XRD). As shown in Figure 1b, diffraction peaks are observed at 32.3°, 34.5°, 36.8° and 57.7°, which can be indexed to the crystal planes (100), (002), (101) and (110) of GaN, respectively (PDF#50‐0792) [18] . The appearance of these four typical peaks in the XRD patterns of Pt/GaN indicates the preservation of the GaN lattice structure after electrodeposition of Pt nanoparticles.…”