Synthesis and characterization of phase change memory cells

Abstract

Phase change memory (PCM) cells based on Ge 2 Sb 2 Te 5 were synthesized and investigated. Currentvoltage measurements demonstrated different final resistances. Transmission electron microscopy (TEM), high resolution electron microscopy (HREM) and the energy dispersive X-ray spectroscopy (EDS) analyses were used to characterize the microstructures of the PCM cells. The architectures, structures and defects in the cells including the deposited elemental distributions and the interfacial structures between electrodes and barrier layers were studied in detail.electron microscopy, microstructure, multilayer structure