Synthesis and characterization of silicon nanocrystals in SiC matrix using sputtering and PECVD techniques

Baskar, Sam; Nalini, R. Pratibha

doi:10.1016/j.matpr.2016.04.117

Cited by 4 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since silicon emits light poorly due to its indirect bandgap, Si-based materials have been investigated ever since the emission from porous silicon was discovered in 1990 [1]. Due to its prospective uses in optoelectronics and photovoltaics [2], silicon carbide (SiC) embedded in a dielectric matrix has recently gained a lot of interest [3]. SiO 2 , Si 3 N 4 , and SiC are materials used to embed SiC in the dielectric [4].…”

Section: ■ Introductionmentioning

confidence: 99%

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

Prayogi

2024

Indones. J. Chem.

View full text Add to dashboard Cite

Using plasma-enhanced chemical vapor deposition (PECVD), a mixed gas of silane (SiH4) and methane (CH4) was diluted with hydrogen (H2) to produce thin films of silicon nanocrystals embedded in a silicon carbide (SiC) matrix. This method prevents the co-deposition of SiH and SiC from high-temperature annealing procedures. This study experimentally explores the improvement of the electronic structure by adjusting two processing parameters according to classical nucleation theory (ratio of SiH4 to CH4 and working gas pressure). The deposited films were examined using ellipsometry spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy, and photoluminescence to determine grain size, crystal volume fraction, topography, and bond configurations. The results show that increasing the working gas pressure can increase the density of SiC, while increasing the ratio of SiH4 to CH4 can only produce larger grain sizes. This is consistent with how SiC works and grows. Without using a high-temperature annealing procedure, this technique can improve the electrical structure of SiC contained in the SiC matrix formed by PECVD.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

Prayogi

2024

Indones. J. Chem.

View full text Add to dashboard Cite

show abstract

Influence of Deposition Temperature on the Si Richness in SiC-Based Thin Films for Optoelectronic Applications

Baskar

Goutham

Sandeep

et al. 2020

Advances in Energy Research, Vol. 1

View full text Add to dashboard Cite

Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films

Baskar

Nalini

2019

JSST

View full text Add to dashboard Cite

Si-rich Silicon carbide thin films have grown popularity in the past decade for various opto-electronic applications. Post processing of these thin films at temperature higher than 1000oC usually lead to phase transformations to form Si nanoclusters embedded in amorphous SiC deposited by sputtering on thin films. However, the processing technique is crucial to avoid contaminants, and obtain good quality films. Therefore, a novel in-situ annealing approach within the deposition chamber is carried out at temperatures lower than usual. The influence of in-situ annealing on the material property is meticulously studied by means of Spectroscopic Ellipsometry (SE), Diffused Reflectance Spectroscopy (DRS), and Fourier Transform Infrared Spectroscopy (FTIR). In SE, the spectra are fitted using various models; the refractive index values confirm the Si-richness of the film. The band gap (2.5 to 1.5 eV) is extracted from UV spectra using Tauc plot, which confirms the coexistence of the multiphase structure with the possibility of having Si-NC with different dimensions. The results obtained are promising for optoelectronic device applications.

show abstract

Synthesis and characterization of silicon nanocrystals in SiC matrix using sputtering and PECVD techniques

Cited by 4 publications

References 15 publications

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

Influence of Deposition Temperature on the Si Richness in SiC-Based Thin Films for Optoelectronic Applications

Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films

Contact Info

Product

Resources

About