VO X thin films were deposited on the Cu/Ti/SiO 2 substrates by reactive sputtering at room temperature and annealed under vacuum at different temperatures. The crystal structure and morphology of VO X films were characterized respectively by XRD and AFM, while the electrical switching properties were tested by Semiconductor Device Analyzer. The effects of annealing temperature on structure and morphology were discussed. Results showed that the film as-deposited was amorphous, and crystallized into different phases (e.g. V 2 O 5 , V 2 O 3 etc.) with the increasing of annealing temperature. AFM results indicated that the crystal grain sizes of VO X thin films were enlarged from 300 to 500℃. The insitu morphologies have obvious changes from RT to 75℃. The device unit produced by films annealed at 400℃ can achieve a reversible metal-insulator transition (MIT), whose reset and set voltage are 0.56V and 1.12V, respectively.