Synthesis and characterization of well-aligned Zn1−xMgxO nanorods and film by metal organic chemical vapor deposition

Yang, Anli; Wei, Hongyuan; Liu, X.L.; Song, Haisheng; Zheng, Guolin; Guo, Yun; Chen, Jiao; Yang, Sheng‐Chiang; Zhu, Qinsheng; Wang, Z.G.

doi:10.1016/j.jcrysgro.2008.10.073

Cited by 25 publications

(5 citation statements)

References 33 publications

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“…Also, the VBO of the C-plane Table I. heterojunction is very close to the value ͑1.95eV͒ that was predicted by Veal et al 20 Using the room temperature band gaps for ZnO and InN ͑3.3 13,14 and 0.7 eV, 1 respectively͒, the InN/ZnO heterojunctions are found to have a type-I ͑staggered͒ band lineup, as shown in Fig. 3, with corresponding conduction band offsets ͑CBOs͒ of 0.84Ϯ 0.2 eV and 0.40Ϯ 0.2 eV for C-plane and A-plane heterojunctions.…”

supporting

confidence: 82%

“…The C-plane and A-plane ZnO in this study were grown by low-pressure metal-organic chemical vapor deposition ͑MOCVD͒, as described elsewhere. 13,14 The C-plane and A-plane InN was grown at 520°C by atmospheric pressure MOCVD. 9 The crystal structures and epitaxial relationships were characterized using a Philips X'Pert x-ray diffraction ͑XRD͒ apparatus and high-resolution XRD measurements ͑Beijing Synchrotron Radiation Facility, not shown here͒.…”

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confidence: 99%

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Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Yang

Song

Wei

et al. 2009

Applied Physics Letters

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The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76±0.2 eV and 2.20±0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84±0.2 eV and 0.40±0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the “intrinsic” valence band offset.

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confidence: 82%

mentioning

confidence: 99%

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Yang

Song

Wei

et al. 2009

Applied Physics Letters

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“…Small changes of the {10 10} and {10 11} plane peaks were seen for samples deposited from solutions B, G and H (see Fig. 12), which incorporated the highest amount of Mg. A similar small peak shift with Mg incorporation was reported for metal organic chemical vapour deposited (MOCVD) [39] or sputtered Zn 1-x Mg x O films [12]. Further, the hexagonal lattice constants a and c of all samples were calculated and are displayed in Fig.…”

Section: Mg Incorporation Into the Zno Latticesupporting

confidence: 73%

Mg-doped ZnO films prepared by chemical bath deposition

et al. 2018

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A simple, low-temperature route for the chemical bath deposition of Mg-doped ZnO films, based on low-cost, abundant and non-toxic materials was developed. The film growth mechanism, the resulting morphology and texture were investigated in detail by scanning electron microscopy and X-ray diffraction measurements. It was found that substantial film growth is only possible in a narrow solution pH window due to the Zn(OH) 2 supersaturation as driving force for the film deposition. Different amounts of Mg in the solution cause distinct (0001), (10 10) or (10 11) ZnO crystal textures. Speciation modelling helped to understand the solution chemistry and explain the occurrence of different textures by face-selective adsorption of Mg species onto specific ZnO faces. The amount of incorporated Mg into the ZnO lattice, determined by inductively coupled plasma atomic emission spectroscopy, was limited to 2.1 mol%. Optical band gaps, calculated from transmittance spectra, showed an increase with higher amounts of incorporated Mg and ranged between 3.41 and 3.55 eV.

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“…Alloying ZnO with Mg was shown to realize the control of the band gap for the realization of light-emitting devices operating in a wider wavelength region [12] without affecting lattice constant, because ionic radius of Mg (0.57 Å) and Zn (0.60 Å) are almost similar [13], the Zn positions can be easily substituted by Mg under certain conditions. By far, Mg-doped ZnO nanostructures have been successfully fabricated by a lot of methods, such as * corresponding author; e-mail: zhuanghuizhao@sdnu.edu.cn nanowires, nanowire arrays and ZnO/MgZnO quantum wells by pulsed laser deposition (PLD) [14][15][16], nanopillars and nanorods by metal-organic chemical vapor deposition (MOCVD) [17,18], nanorods, nanowires, ternary nanowires, nanoterapods, nanopagodas and dendritic Zn 1−x Mg x O nanostructures by thermal evaporation [14,[19][20][21][22][23], nanowires by thermal diffusion [24]. Nevertheless, there are only a few reports on Mg-doped ZnO nanowires using a mixture of ZnO and activated carbon powders as source materials reported yet except for Wei et al [25].…”

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confidence: 99%

Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

et al. 2011

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ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850• C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.

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Synthesis and characterization of well-aligned Zn1−xMgxO nanorods and film by metal organic chemical vapor deposition

Cited by 25 publications

References 33 publications

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

Mg-doped ZnO films prepared by chemical bath deposition

Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

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