Synthesis and characterization of ZnO thin film grown by electron beam evaporation

Abstract

Highly transparent, conducting, highly oriented, and almost single phase ZnO films have been deposited by simple e-beam evaporation method, and the deposition parameters were optimized. The films were prepared by (a) evaporation of ZnO at different substrate temperatures and (b) evaporation of ZnO at room temperature and subsequent annealing of the films in oxygen ambient at different temperatures. The characterizations of the film were performed by optical absorption spectroscopy (UV-visible), Fourier transform infrared spectroscopy, resistivity measurement, transmission electron microscopy (TEM), photoluminescence, and x-ray diffraction measurement. Absorption spectra revealed that the films were highly transparent and the band gap of the pre- and postannealed films was in good agreement with the reported values. The band gap of the films increases on increasing the substrate temperature as well as annealing temperature, whereas the resistivity of the film decreases with substrate temperature and increases with annealing temperature. Fourier transform infrared spectroscopy of ZnO films confirms the presence of Zn–O bonding. X-ray diffraction, electron diffraction, and TEM images with high resolution and Raman spectra of the films showed the formation of crystalline ZnO having wurtzite structure

Fabrication of ZnO nanoparticles by laser ablation of sintered ZnO in aqueous solution

“…In Figs. 5(a) and (b), there is a strong band at 460 cm −1 , which is associated with the characteristic vibration mode of Zn-O bond [18,20,25,26]. The broad bands at approximately 1500 cm −1 and 1380 cm −1 may correspond to bending mode of -CH 2 -and asymmetric -CH 3 deformation of SDS, respectively [27].…”

Effects of temperature and pressure on the structural and optical properties of ZnO films grown by pulsed laser deposition

“…Many techniques, such as electron-beam (EB) evaporation [8], plasma enhanced chemical vapor deposition (PECVD) [9], metal organic chemical vapor deposition (MOCVD) [10], rf magnetron sputtering [11], molecular beam epitaxy (MBE) [12], and pulsed laser deposition (PLD), have been used to prepare ZnO thin films.…”

Microstructure, magnetic and optical properties of sputtered polycrystalline ZnO films with Fe addition

“…Hayashi et al also recorded the FTIR spectra of ZnO [22]. Agarwal et al report that ZnO films on Si substrate show a strong peak at 408 cm À1 and two weak peaks at 513 and 567 cm À1 [23]. In the present FTIR spectra, the peaks are mainly situated at 276, 408, 513, and 595 cm À1 .…”

“…The full width at half maximum (FWHM) of the peak situated at 408 cm À1 increases with the increase of x Fe but no significant change in the peak position is observed. Larger FWHM value indicates wider distribution of vibration energy of the Zn-O bonds [23]. The increasing FWHM with the increasing x Fe shows that the vibration energy becomes narrower, which suggests that the crystallinity of the sputtered ZnO films is damaged as x Fe increases.…”