Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

Abstract

InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

“…Figure 3 demonstrates clearly the proof-of-concept by connecting two individual single NW solar cells in tandem (in series) to reinforce the voltage and in parallel to enhance the current. 36 At the same time, the GaAs NW parallel arrays are as well fabricated by contact printing, 13,37 and the optimized Au-Al asymmetric electrodes are deposited to achieve the Schottky solar cells as depicted in Figure 4. It is obvious that the printed NW density is ~1.5 NW/µm, accounting for a total of 300 NWs in the 200 µm wide device ( Figure 4a).…”

Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

“…[ 39,40 ] By controlling the source temperature and the pressure in the growth chamber, we enabled the growth of core/shell-like NWs with perfect single crystal cores and highly defected shells. Figure 2 a shows transmission electron microscopy (TEM) images of a typical NW.…”

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

“…[1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme. [9,19] Although hydrothermal methods are seem to be the simple process and capable to produce large amounts of 1D nanomaterials with the relatively low cost, they are challenging to precisely control the diameter, morphology, and crystal structure of the nanomaterials obtained, seriously influencing their chemical and physical properties, eventually limiting their practical utilizations.…”