Synthesis and crystal structure of the quaternary compound AgFe2GaTe4

Delgado, Gerzon E.; Quintero, E.; Tovar, R.; Grima‐Gallardo, P.; Quintero, M.

doi:10.1016/j.jallcom.2014.06.004

Cited by 12 publications

(7 citation statements)

References 26 publications

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“…Structural studies carried out on some members of this family indicate that they crystallize in a sphalerite derivative structure (stannite) with tetragonal space group I 4 2m (No. 121) 11 , or in a wurtzite derivative structure (wurtzite- In recent years, it has been of interest to carry out a systematic study of the crystal structure of quaternary diamond-like families [13][14][15][16][23][24][25][26] . Hence, in this work we report the X-ray powder diffraction analysis and crystal structure of the quaternary compounds CuCo 2 InTe 4 and CuNi 2 InTe 4 , two new members of the I-II 2 -III-VI 4 family, which crystallize with a stannite structure.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Two New Quaternary Chalcogenides: CuCo2InTe4 and CuNi2InTe4

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Structural Characterization of Two New Quaternary Chalcogenides: CuCo2InTe4 and CuNi2InTe4

et al. 2016

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“…In particular, the composition I-II 2 -III-VI 4 can be seen as the addition of a II-VI binary compound to ternary chalcopyrite structures I-III-VI 2 to produces alloys of composition (I-III-VI 2 ) 1−x -(II-VI) x with x = 2/3. Proof of the formation of these types of compounds can be found in the recent literature [9][10][11][12][13]. Structural studies carried out on some members of both families of compounds indicate that they crystallize in a sphalerite derivative structure (stannite) with tetragonal space group I42m (No.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure of the new diamond-like semiconductor CuMn2InSe4

Delgado

Sagredo

2016

Bull Mater Sci

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The crystal structure of the semiconductor compound CuMn 2 InSe 4 was analysed using X-ray powder diffraction data. CuMn 2 InSe 4 crystallizes, with a stannite structure, in the tetragonal space group I42m (No. 121), Z = 2, with unit cell parameters a = 5.8111(2) Å, c = 11.5739(8) Å and V = 390.84(3) Å 3. The refinement of 28 instrumental and structural parameters led to R p = 8.1%, R wp = 10.5%, R exp = 6.5% and S = 1.6, for 86 independent reflections.

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“…x (Fe-Se) x (Parthé, 1995). The synthesis and crystal structure characterization of some member with compositions Cu-Fe-III-S 3 (x = ½), Cu-Fe 2 -III-Se 4 (x = ⅔) and Cu 2 -Fe-III-Se 5 (x = ⅓) have been reported (Delgado et al, 2008;2009;2010;2014;Grima-Gallardo et al, 2000;2001a;2001b, 2007a, 2007bMora et al, 2007;Flores-Cruz et al, 2018). All these phases fulfill the rules of formation of adamantane compounds and belong to the normal semiconductor compound families (Parthé, 1995).…”

Section: Introductionmentioning

confidence: 99%

CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe3

Delgado¹,

Delgado-Niño²,

Grima‐Gallardo³

2019

PTQ

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The compounds with ternary structures of the chalcopyrite family Cu-III-Se2 (III = Al, Ga, In, Cr) form a wide group of semiconductor materials with diverse optical and electrical properties, and the addition of FeSe binary compound produces alloys of the type (Cu-III-Se2)1-x(Fe-Se)x. These types of materials have received increasing attention as promising thermoelectric materials due to their high efficiency, tunable transport properties, high elemental abundance and low toxicity. This work aims to synthesize and characterize structurally a new material belonging to this semiconductor system with x = ½, the quaternary compound CuFeCrSe3. This material was prepared by the melt and anneal technique and its structure was refined from Xray powder diffraction pattern using the Rietveld method. The X-ray powder pattern was mainly composed of CuFeCrSe3 (79.1%) with CuCr2Se4 (20.9%) appearing as secondary phase. The principal phase crystallizes with tetragonal symmetry in the space group P 4 2c (Nº 112), Z = 1, with a = 5.5082(2) Å, c = 10.943(1) Å, V = 332.01(1) Å3. The refinement of 18 instrumental and structural parameters led to Rp = 8.8 %, Rwp = 9.1 %, Rexp = 7.8 % and S = 1.2. This material, belonging to the semiconductor system I-II-III-VI3, crystallizes with a CuFeInSe3-type structure in a normal adamantane-structure. CuFeCrSe3 is a new semiconductor compound, related to the superionic phase CuCrSe2, and can be considered as a potential candidate for mediumtemperature thermoelectric applications.

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Synthesis and crystal structure of the quaternary compound AgFe2GaTe4

Cited by 12 publications

References 26 publications

Structural Characterization of Two New Quaternary Chalcogenides: CuCo2InTe4 and CuNi2InTe4

Structural Characterization of Two New Quaternary Chalcogenides: CuCo2InTe4 and CuNi2InTe4

Crystal structure of the new diamond-like semiconductor CuMn2InSe4

CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe3

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