Synthesis and Effect of the Structure of Bithienyl-Terminated Surfactants for Dielectric Layer Modification in Organic Transistor

Feriancová, Lucia; Kmentová, Iveta; Micjan, Michal; Pavúk, Milan; Weis, Martin; Putala, Martin

doi:10.3390/ma14216345

Cited by 4 publications

(3 citation statements)

References 38 publications

(45 reference statements)

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“…Therefore, the interfacial quality between the OSC and the dielectric seriously affects the transport behavior of charge carriers. For instance, the structural defects and polar functional groups on the dielectric surface would induce interfacial traps, and they act as energetic traps or carrier scattering centers, − which will lead to large SS and V th in OFETs. Therefore, elimination of the structural and energetic defects at the interface between gate dielectric and OSC is a prerequisite for the achievement of low-voltage OFETs.…”

Section: Lowering the Trap Densitymentioning

confidence: 99%

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Ren

Zhang

et al. 2022

ACS Materials Lett.

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The quest for organic field-effect transistors (OFETs) with low operating voltage has become highly compelling in many application areas, such as medical sensors, radio frequency identification (RFID), wearable and stretchable technologies, etc. To this end, considerable efforts have been devoted to decreasing the operation voltage of OFETs while retaining high performance over the last few decades. This Review focuses on the recent progress in the field of low-voltage OFETs. The critical factors to realize low-voltage OFETs are analyzed systematically through establishing the relationships between the operation voltage and subthreshold swing. Further on the strategic approaches for lowering the operation voltage, increasing gate dielectric capacitance, reducing the trap density within the semiconductor layer or at device interfaces, and using the negative capacitor effect, are summarized and discussed. We conclude with an overview of these critical methods and the key challenges to enable the laboratory-to-production transition.

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Section: Lowering the Trap Densitymentioning

confidence: 99%

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Ren

Zhang

et al. 2022

ACS Materials Lett.

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“…Concerning the OTFT architecture, the focus has been placed on the optimization of the dielectric–semiconductor interface by comparing two different passivation layers, that is, polystyrene (PS) and octadecyltrichlorosilane (OTS). This element also plays a key role in determining the performance of the final device. − In order to get further insight into the role of these structural features and the main core design, the elucidation of the crystal structures represented a crucial step. In this context, the resolution via powder X-ray diffraction (PXRD) proved as a valuable support for the interpretation of derivatives 1a , 1b, and 1d , which represent the only reported crystal structures of N -trialkylated diindolocarbazole derivatives to date.…”

Section: Introductionmentioning

confidence: 99%

Insight into the Diindolo[3,2-b:2′,3′-h]carbazole Core as an Air-Stable Semiconductor for OTFTs

Bujaldón

Vilche

Puigdollers

et al. 2023

ACS Appl. Electron. Mater.

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Encouraged by the outstanding performance of pentacene, the perspective over enhanced organic semiconductors has been focused on studying analogous ladder-type materials. In this context, the case of the diindolo[3,2-b:2′,3′-h]carbazole core is a promising example of a semiconductor with improved stability. Herein, we report the synthesis of five diindolo[3,2-b:2′,3′-h]carbazole derivatives displaying different alkylation patterning, as well as their integration in organic thin-film transistors. The elucidation of the single-crystal structures of three of the derivatives, accomplished by means of powder X-ray diffraction (PXRD), provided further insight into the intermolecular disposition of this core. As a result, the relationship between the structural design and the performance of the final devices could be analyzed. Globally, a scope of mobility values from 10–6 to 10–3 cm2 V–1 s–1 was achieved by just fine-tuning the length of the alkyl chains and the type of passivation layer applied onto the SiO2 surface. Remarkably, all the fabricated devices excel in terms of temporal and air stability with a shelf lifetime up to years, a coveted feature in organic electronics that confirms the potential of this core.

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“…Regarding the architecture of the device, the focus has been placed on optimizing the interface between these semiconductors and the Si/SiO 2 substrate in a bottom-gate top-contact OTFT. In fact, the presence of a passivation coating or anchored groups in the interface can greatly influence the growth and features of a vacuum-deposited thin film [41][42][43][44][45]. Specifically, the SiO 2 surface has been either functionalized with octadecyltrichlorosilane (OTS) as an aliphatic self-assembled monolayer (SAM) or coated with polystyrene (PS) as an aromatic polymeric layer.…”

Section: Introductionmentioning

confidence: 99%

Role of the Alkylation Patterning in the Performance of OTFTs: The Case of Thiophene-Functionalized Triindoles

et al. 2023

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Organic semiconductors have emerged as potential alternatives to conventional inorganic materials due to their numerous assets and applications. In this context, the star-shaped triindole core stands as a promising system to design new organic materials with enticing charge-transporting properties. Herein, we present the synthesis of three thiophene-containing triindole derivatives that feature N-alkyl chains of different lengths, from methyl to decyl. The impact of the alkylation patterning on the crystallinity of the thin films and their resultant performance as semiconductor have been analyzed. All derivatives displayed p-type semiconductor properties, as demonstrated via both TOF measurements and integration in organic thin-film transistor (OTFT) devices. The attachment of longer alkyl chains and the functionalization of the silicon substrate with octadecyltrichlorosilane (OTS) prompted better OTFT characteristics, with a hole mobility value up to 5 × 10−4 cm2 V−1 s−1. As elucidated from the single crystal, this core is arranged in a convenient cofacial packing that maximizes the π-overlapping. The analysis of the thin films also corroborates that derivatives possessing longer N-alkyl chains confer a higher degree of order and a more adequate morphology.

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Synthesis and Effect of the Structure of Bithienyl-Terminated Surfactants for Dielectric Layer Modification in Organic Transistor

Cited by 4 publications

References 38 publications

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Insight into the Diindolo[3,2-b:2′,3′-h]carbazole Core as an Air-Stable Semiconductor for OTFTs

Role of the Alkylation Patterning in the Performance of OTFTs: The Case of Thiophene-Functionalized Triindoles

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