Synthesis and electrical properties of screen-printed doped ceria interlayer for IT-SOFC applications

Room temperature curable zirconium silicate dielectric ink for electronic applications

“…32 The temperature coefficient of relative permittivity (τ ε ) is one of the critical parameters required for the stability of the signal in the 45 printed microwave devices. The variation of relative permittivity of printed ZrSiO 4 layer on BoPET substrate with respect to the temperature range (25-60 o C) is shown in Figure 7 (b) and gives a τ ε of 55 ppm/ o C. About 10 % variations in the relative permittivity at 10 and 15 GHz using SPDR is attributed to 50 difference in measurement equipment and accessories used. The two different measurement methods and equipment's may attribute the 12 % variation in the relative permittivity measurement using SPDR and wave guide technique used in this study.…”

“…20,33,34 The microwave dielectric properties of printed ZrSiO 4 layer on BoPET film and BoPET film were also measured at 10 and 15 GHz using Split Post Dielectric Resonator (SPDR) (QWED, Warsaw, Poland). In this technique the total uncertainty of real permittivity does not exceed 0.5% and is possible to 50 resolve dielectric loss tangents to approximately 5x10 -5 . 35 The effect of folding (bending) on microwave dielectric properties of printed ZrSiO 4 layer on BoPET film is also measured.…”

“…The prepared ZrSiO 4 inkshowed pseudoplastic nature, i.e, viscosity decreased with increasing shear rate. The formulated ink showed a viscosity of50 12 Pa.s at lower shear rate of 10 s -1 while at a higher shear rate of 90 s -1 viscosity decreased down to about 3 Pa.s. The viscosity of the ink proved to be feasible for screen printing and maintained colloidal stability.…”

Enhanced Oxygen Reduction Reaction in Nanocrystalline Surface of Samaria‐Doped Ceria via Randomly Distributed Dopants

“…To enhance surface kinetics, various approaches have been taken with the acceptor‐doped ceria, which has a high surface exchange rate in the low temperature region (<500°C), especially in terms of engineering grain‐boundary density or defect chemistry at the surface of the electrolyte . High grain‐boundary densities in nanocrystalline oxide materials are typically expected to improve ORRs due to abundant oxygen vacancy sites along with surface grain boundaries .…”

Synthesis and Electrochemical Studies of Novel Cobalt Free (Nd0.9La0.1)1.6Sr0.4 Ni0.75Cu0.25O3.8 (NLSNC4) Cathode Material for IT‐SOFCs

“…During the past decade, solid oxide fuel cells (SOFCs) have been considered as promising candidate for energy conversion due to their favorable features such as low emission, high efficiency, and fuel flexibility –. However, the operating temperature of customary oxygen conductor SOFC is as high as 800–1,000 °C, which causes reaction and thermal expansion mismatch between the components of the cell and brings in issues for selecting the required sealing materials , . Therefore, researchers are trying to find a way for reducing the operating temperature of SOFCs to intermediate temperatures (IT, 600–800 °C) , .…”