“…Tin oxide, as n-type and wide band gap (E g ¼ 3.6 eV) [9] semiconductor nanostructure, has potential for the applications in various field emission-based devices. It has been intensively investigated due to its inherent properties and anticipated applications in many areas such as chemical and gas sensors [10], solar cells, transistors, conducting electrodes and optoelectronic devices [9,11]. One-dimensional tin oxide nanostructures, due to their ability to introduce foreign atoms into the crystal lattice to specifically tailor the electrical and optical properties, make them highly versatile [11].…”