Synthesis and field emission properties of TiSi2 nanowires

Abstract

TiSi 2 is a high-melting compound with excellent conductivity ∼severalμΩcm. TiSi2 nanowires were fabricated in large scale by a simple vapor phase deposition method. The as-synthesized TiSi2 nanowires were investigated using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering. Field emission property of TiSi2 nanowires was studied and an emission current density of 5mA∕cm2 was obtained and no obvious degradation was observed in a life stability experiment period for over ∼40h. The cathodoluminescence images were very bright and homogenous. The remarkable performance reveals that the TiSi2 nanowires can serve as a good candidate for commercial application in vacuum microelectronic devices, particularly flat panel displays.

Co‐synthesis of ZnO–CuO Nanostructures by Directly Heating Brass in Air

“…Taking the work function value of ZnO as 5.4 eV, [53,55] the c value is about 1701 for d = 100 lm, 2127 for d = 200 lm, and 4065 for d = 300 lm. These values are much larger than those from ZnO nanopins [55] and TiSi 2 nanowires [56] measured under similar conditions in the same machine, which may be due to the sharper tips (about 10-20 nm) of our ZnO nanoflakes and rough-substrate-induced multistage effects, [57] caused by the cluster-shaped substrate underneath the ZnO nanoflakes, as shown in Figure 7b. Enhanced FE has been observed from ZnO nanowires grown on rough substrates such as carbon cloth.…”

Spontaneous Chemical Vapor Growth of NiSi Nanowires and Their Metallic Properties

“…Although the values reported here are higher than the lowest values reported for carbon nanotube strands, they are still lower than those recently reported for silicon [17] and other silicide nanowire emitters. [18,19] The quantitative degree of the local field enhancement from the emission tip geometry can be often assessed by the linear fit to the ln (J/E Figure 4b, is linearly fitted in the emission region with U = 4.7 eV of NiSi, and the value of b is extracted to be 2200, which is higher than other nanowire emitters, such as Si nanowires, [17] TaSi 2 nanowires, [6] and oxide nanowires. [20,21] A growth mechanism for the NiSi nanowires in the context of chemical vapor reactions based on the experimental observations of this study is presented.…”

Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Properties

“…By determining the slope of the FN plot, the field enhancement factor β of single-stem nanowires was calculated to be 1 Â 10 3 , which is higher than other silicide nanowire emitters mentioned above. [15][16][17][18][19] The field emission of single-stem nanowires is more efficient, homogeneous, and stable, as illustrated in Figure 3. The 3D network structure appeared to be less efficient than singlestem nanowires in current emission.…”

“…The values are much lower than the reported values of TaSi 2 , TiSi 2 , and Ni silicides nanowires. [15][16][17][18][19] The turn-on field of the straggled single-stem nanowires was not stable and the best profile is shown in Figure 3. Compared to the 3D network structure, the turn-on field is lower and the emission current is higher for the single-stem nanowires.…”

“…14 A number of metal silicide nanowires, including TaSi 2 , TiSi 2 , and Ni silicides nanowires, were also reported to possess excellent field-emission properties. [15][16][17][18][19] Various effective strategies have been developed for the synthesis of silicide nanowires. 13,[20][21][22] TiSi 2 nanowires were grown in a single direction on silicon surface by reactive deposition epitaxy.…”