Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Properties

Tsai, Chun I.; Yeh, Ping Hung; Wang, Chiu Yen; Wu, Han; Chen, Uei Shin; Lu, Ming; Wu, Wen‐Wei; Chen, Lih Juann; Wang, Zhong Lin

doi:10.1021/cg900531x

Cited by 40 publications

(33 citation statements)

References 34 publications

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“…In addition, metal-induced growth, chemical vapor deposition (CVD), and chemical vapor transport method have been successfully applied to synthesize NiSi [21,22], Ni 31 Si 12 [20], Ni 3 Si [23], and Ni 2 Si [24] NWs, and their physical properties have been investigated. For simplification of the whole processing, metal chloride compounds such as Fe(SiCl 3 ) 2 (CO) 4 [9], CoCl 2 [11,25], or NiCl 2 [19] are commonly used as single-source precursors (SSPs) in synthesizing metal-silicide NWs. In this work, δ-Ni 2 Si NWs were synthesized via CVD method with SSP of NiCl 2 .…”

Section: Introductionmentioning

confidence: 99%

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

Chiu

Chen

et al. 2013

Nanoscale Res Lett

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In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.

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Section: Introductionmentioning

confidence: 99%

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

Chiu

Chen

et al. 2013

Nanoscale Res Lett

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“…21,26 For the study of the temperature effect, the ambient pressures were fixed at 1 Torr, which is based on our previous report for the growth of the CoSi nanostructures. 12,23 The influence of ambient pressure on the aspect ratio and density of NWs has been studied. Figures 1(d)-1(f) show the as-grown products at different growth pressure, respectively, proving that aspect ratio and density were also controlled by the pressure.…”

Section: Resultsmentioning

confidence: 99%

Growth of single-crystalline cobalt silicide nanowires with excellent physical properties

Hsin

et al. 2011

Journal of Applied Physics

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With the miniaturization of electron devices, the minuscule structures are important to state-of-the-art science and technology. Therefore, the growth methods and properties of nanomaterials have been extensively studied recently. Here, we use chemical vapor transport (CVT) methods to synthesize single-crystalline cobalt silicide nanowires (NWs) by using (CoCl2·6 H2O) as a single-source precursor. By changing reaction temperature and ambient pressure, we can obtain different morphology of cobalt silicide NWs under the appropriate concentration of silicon and cobalt. The field emission measurement of CoSi NWs shows low turn-on field (5.02 V/μm) and it is outstanding for magnetic properties that differ from the bulk CoSi. The CoSi nanowires with different diameters have diverse magnetic saturation (Ms) and coercive force (Hc).

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“…[27][28][29] In the same manner, the growth of the CrSi 2 nanowire bundles in this system could be described as follows.…”

Section: Syntheses Of Nanostructure Bundlesmentioning

confidence: 99%

“…The Mg-based compounds were originally considered to be one of the thermoelectric materials capable of operating above 200 ○ C. 4 On the other hand, higher manganese silicides (HMS) with a direct bandgap of about 0.7 eV, the important transition-metal silicides, are considered to be appropriate semiconducting materials for use in thermoelectric devices at high temperature due to their high Seebeck coefficient, low resistivity and high oxidation resistance. 1,27,48 The template synthesis using artificial Si nanowire arrays was previously reported by Tatsuoka et al for the synthesis of Mg 2 Si nanowire bundles treated under a Mg vapor. 49 The technique was also shown for the synthesis of MnSi 1:75 nanowires treated under a Mn vapor by Pokhrel et al later.…”

Section: Syntheses Of Nanostructure Bundlesmentioning

confidence: 99%

Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

Ishikawa

Tatsuoka

2013

Funct. Mater. Lett.

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A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi 2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl 2 vapor at atmospheric pressure. A hexagonal MoSi 2 nanosheet, Mg 2 Si/MgO composite nanowire and Mg 2 Si nanowire bundles and MnSi 1:7 nanowire array were synthesized using a MoS 2 layered material, a SiO x nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.Semiconducting metal silicides have been extensively investigated for silicon-based semiconducting technology and considered as promising materials for the renewable energy technology in the field of thermoelectric and photovoltaic applications. 1,2 Compared to the conventional semiconducting materials, the metal silicides have many advantages, such as low-cost, natural abundance, non-toxicity and easy recycling, therefore, they are considered as environmentally friendly semiconductor materials. Recently, a variety of metal silicides, for example, β-FeSi 2 , Mg 2 Si, MnSi 1:7 , hexagonal MoSi 2 and CrSi 2 , have been successfully grown by various growth techniques. 3-7 However, few metal silicide has been applied for the practical use, which is attributed to the modest figure of merit (ZT) of the metal silicides.One-dimensional nanostructures are attracting a great deal of attention due to their unique properties and novel applications compared to those of bulk materials. A decrease in the thermal conductivity and an increase in the power factor, S 2 , of the nanostructures have been demonstrated by the theoretical calculations and proof of principle experiments, relative to the corresponding bulk structures. [8][9][10][11] Hochbaum et al. reported that the Si nanowires with diameters of about 50 nm exhibit a 100-fold reduction in thermal conductivity, yielding ZT ¼ 0.6 at room temperature. 11 Various nanostructures have been synthesized and charactered, such as wires, rods, nails, ribbons, belts, sheets and rings. It is well-known that a single-walled carbon nanotube can be metallic or semiconductive, depending on the helical angle at which the graphitic sheet is rolled up, 12 which reveals the importance of controlling its morphological and structural properties. Unfortunately, the growth window for the specific morphology is narrow, namely the morphology can be significantly changed as wires, rods, ribbons...

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Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Properties

Cited by 40 publications

References 34 publications

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

Growth of single-crystalline cobalt silicide nanowires with excellent physical properties

Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

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