Growth of single-crystalline cobalt silicide nanowires with excellent physical properties

Abstract

With the miniaturization of electron devices, the minuscule structures are important to state-of-the-art science and technology. Therefore, the growth methods and properties of nanomaterials have been extensively studied recently. Here, we use chemical vapor transport (CVT) methods to synthesize single-crystalline cobalt silicide nanowires (NWs) by using (CoCl2·6 H2O) as a single-source precursor. By changing reaction temperature and ambient pressure, we can obtain different morphology of cobalt silicide NWs under the appropriate concentration of silicon and cobalt. The field emission measurement of CoSi NWs shows low turn-on field (5.02 V/μm) and it is outstanding for magnetic properties that differ from the bulk CoSi. The CoSi nanowires with different diameters have diverse magnetic saturation (Ms) and coercive force (Hc).

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

“…The field enhancement factor was calculated to be about 1,132 from the slope of the ln( J / E 2 )−1/ E plot with the work function of 4.8 eV [32] for Ni 2 Si NWs. Based on the measurements, Ni 2 Si NWs exhibited remarkable potential applications as a field emitter like other silicide NWs [20,25,33]. …”

Stability and vibrations of doubly parallel current-carrying nanowires immersed in a longitudinal magnetic field

“…Because of their superior mechanical behavior [1,2] as well as advanced physical and chemical properties [3][4][5], nanowires have been regarded as a hot materials in recent years. Nanowires exist in various forms which are made of metals, organic compounds, insulators, and semiconductors.…”

Chiral Magnetism and High-Temperature Skyrmions in B20-Ordered Co-Si

“…Some B20 alloys are not even ordered at zero temperature, including CoSi and FeSi [1,12,13]. However, cobalt generally exhibits a trend towards ferromagnetism, and CoSi nanowires having diameters of the order of 50 nm actually exhibit a small net moment due to spin-polarized Co atoms near the surface [14,15]. It is therefore tempting to use a small amount x of excess Co to replace Si and to realize a magnetically ordered CoðSi 1−x Co x Þ or simply Co 1þx Si 1−x .…”