Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates

Field-emission properties of individual GaN nanowires grown by chemical vapor deposition

“…The turn-on field for a collection of GaN nanowires has typically been defined as the field required for generating emission current densities of 0.01 mA/cm 2 . 11,13,15,16 For an individual nanowire with a diameter of a few tens of nanometers, these would correspond to a current on the order of 10 À16 A, which is below the resolution of our measurement circuitry. In our devices, the first noticeable sign of turn-on was observed at an applied field of $21 V/lm (at which the current was $100 pA).…”

“…Further-more, the local turn-on electric field for a collection of GaN nanowires was calculated as $4.1 Â 10 3 V/lm, which is again comparable to the value we obtained for an individual GaN nanowire, although the macroscopic turn-on fields were quite different in the two cases. 16 Consequently, it seems that the comparison of local electric fields calculated using the applied field and b is more appropriate than the comparison of the applied (macroscopic) electric field or the comparison of b itself among different nanowires and in different experiments.…”

“…Previous studies on field-emission properties of GaN nanowires have focused on collections of these nanowires. [11][12][13][14][15][16] It has been observed that GaN bundles have lower turn-on field and higher emission current density compared to bulk GaN and relatively longer lifetime and better stability than some of the other nanomaterials. 12 However, to the best of our knowledge, the field-emission properties of individual GaN nanowires have not been studied so far.…”

A low cost, green method to synthesize GaN nanowires

“…To date, the synthesis of GaN NWs have been achieved by various of technical routes, such as carbon-nanotube-confined reaction 15 , oxide-assisted method 16 , vapor-solid mechanism 17 and vapor-liquid-solid mechanism 18 . Many types of source materials have been attempted such as trimethylgallium (TMG), metal gallium, gallium chloride (GaCl 3 ) and gallium nitride (GaN), etc 9 19 20 21 , but most of them are either expensive or toxic. In addition, ammonia, which is corrosive and harmful, is always used as the reaction gas.…”

Growth and Excellent Field Emission Properties of GaN Nanopencils and Nanotowers

“…The F-N curves inset in Fig.4a and Fig.4b are linear approximately, which indicate that the field electron emissions of the samples are caused by vacuum tunneling effect [16] . [5,[8][9][10][11][12][13][15][16][17][18][19][20][21][22][23]. We believe this result is due to (1) The morphology of GaN is like a hedgehog, and the sharp ends of GaN nanopencils benefit to electron emission; (2) The surface of the GaN nanotowers is a layer structure, so there are numerous edges on the surface of the GaN nanotowers.…”