Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures

Hull, R.; Floro, Jerrold A.; Graham, Jeremy; Gray, Jennifer L.; Gherasimova, M.; Portavoce, A.; Ross, FM

doi:10.1016/j.mssp.2008.10.011

Cited by 11 publications

(8 citation statements)

References 29 publications

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“…There have been reports of two-dimensional (2D) QD arrays created by epitaxial growth on substrates. 9,10 Surface-modified QDs have been utilized for obtaining stable dispersions in anisotropic media of liquid crystals for photonic applications. [11][12][13][14][15][16] Furthermore, semiconductor NP-dendrimer composites have been obtained by synthesis of QDs in dendrimer templates.…”

Section: Introductionmentioning

confidence: 99%

A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence

Matsubara

Stevenson

Yabuki

et al. 2017

Chem

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Self-assembling quantum dots (QDs) have been obtained via the attachment of an outer corona of aromatic liquid crystalline (LC) dendrons to the surface of an inner alkylthiol corona encapsulating CdS nanoparticles. The dendronized CdS QDs form a cubic LC structure with an unusually low P2 1 3 symmetry. The anisotropic distribution of dendrons in the QD organic corona and in the P2 1 3 LC superlattice is thought to facilitate stacking interactions between the aromatic moieties. Moreover, the dendronized CdS QDs show LC structure-dependent photoluminescence quenching.

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Section: Introductionmentioning

confidence: 99%

A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence

Matsubara

Stevenson

Yabuki

et al. 2017

Chem

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“…The FIB technique has a number of applications such as nano-scale machining/engineering, 1-3 transmission electron microscopy (TEM) sample preparation, 4 directing the assembly of semiconductor nanostructures, [5][6][7] and potential nano-scale doping. 8,9 The last two applications are particularly relevant to Si nanoelectronics and are the most relevant to the work described here. An important factor that distinguishes the FIB from conventional commercial ion implantation is the ion current density, which is typically 0.1-10 A cm À2 , and that is at least 3 orders of magnitude higher than that in commercial implanters.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Balasubramanian

Hull

2016

Journal of Elec Materi

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The ion current density in focused ion beam (FIB) systems, 0.1-10 A cm À2 , is at least three orders of magnitude greater than that in commercial broad ion beam implanters. This large difference in ion current density is expected to strongly affect the damage recovery dynamics. In this work, we study the ion implantation damage and recovery of Si(100) substrates implanted with 1 9 10 12 -5 9 10 15 Si cm À2 fluences of 60-keV Si 2+ at normal incidence in a mass-selecting FIB. Additionally, damage and recovery in different broad ion beam implants of 60-keV Si + were studied for a comparison. For recovering implantation damage, specimens were annealed for different times at 730-900°C in an ultra-high purity nitrogen ambient, and for characterizing damage and recovery, Raman spectroscopy at wavelengths 405 nm and 514 nm was carried out. Raman measurements comprised of measurements of crystalline Si (c-Si) peak height of the peak at 520 cm À1 , and the peak shift relative to that of un-implanted reference Si. Our measurements of structural damage-calculated from the attenuation in the c-Si peak heights for the implants relative to that of unimplanted Si(100)-indicates that the FIB implantations lead to a greater as-implanted damage but also typically lead to a better recovery than that for the commercial broad-area implants. The underlying mechanisms for these observations are discussed.

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“…FIBs have been used earlier to template Ge QDs 7 as well as other Ge nanostructures. 22 They possess unique advantages compared to photolithographic techniques including the direct writing of patterns, i.e., resist or pattern transfer are not required, and the ability to rapidly write complex, asymmetric patterns without the need for a mask. High-fidelity pattern replication has been reported for Ge QDs grown on FIB-patterned surfaces, although loss of fidelity was reported below 100 nm pitch due in part to competition between adjacent sites.…”

Section: à2mentioning

confidence: 99%

Highly uniform arrays of epitaxial Ge quantum dots with interdot spacing of 50 nm

Duska

Floro

2014

J. Mater. Res.

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Periodic, highly uniform arrays of dome-like Ge quantum dots (QDs) with 50 nm interdot pitch have been achieved on Si (001). The Si surface was patterned using ultra-low-dose focused ion beam and defect-selective etching, resulting in a continuously height-modulated, "egg-carton" morphology. The directed self-assembly process is robust, occurring across a range of ion doses, growth temperatures, and deposition rates. By selectively etching off the Ge dots to reveal the underlying Si surface just prior to Ge growth, we showed that Ge QDs preferentially formed on crowns (regions of negative curvature) rather than pits (regions of positive curvature) as is mostly seen in the literature. The width of the QD size distribution mimics that of the underlying substrate pattern, indicative of a complete lack of coarsening during the Ge growth, despite the small length scales, and extensive mass transport leading to QD formation.

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Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures

Cited by 11 publications

References 29 publications

A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence

A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence

Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si

Highly uniform arrays of epitaxial Ge quantum dots with interdot spacing of 50 nm

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