Synthesis and growth mechanism of monodispersed MoS2 sheets/carbon microspheres

Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor

“…[7][8][9] These effects are understood to arise from various causes such as thermodynamic instabilities in such 2-D materials, the differences between thermal expansion coefficient of the film and substrate, and strains arising during transfer of 2-D films onto substrates. [7][8][9] In case of nanoribbons, the most common types of deformations include the minor amount of twisting and wrapping. Though rather small in magnitude, such deformations could have a significant impact on the performance of MoS 2 ANR channel in terms of transmission properties and especially on the NDR characteristics of MoS 2 FET.…”

Low-Dimensional ReS2/C Composite as Effective Hydrodesulfurization Catalyst

“…The absence of the (002) diffraction peak at 2θ = 14.5 • indicates an extremely low stacking along the (00l) direction, pointing to the presence of crystallographically-independent ReS 2 layers [25]. The absence of the (002) reflection has been reported for MoS 2 and WS 2 layers with no preferential orientation and random arrangement [26,27]. The Raman spectrum showed in the Figure 1b indicates the characteristic Raman modes (labeled III to V) for ReS 2 [3,28].…”

“…The overlap of the Eg-like vibrations may have arisen from the random arrangement and poorly crystalline phase of the ReS 2 in the composite. Also, the formation of amorphous carbon, expected to be formed by the decomposition of the alkylammonium salt [29], was corroborated by the presence of the D and G carbon bands at 1362 and 1578 cm −1 [26]. Figure 2 shows the nitrogen adsorption-desorption isotherm for the ReS2/C composite.…”

First principle defect study of MoSe2 field effect transistor

“…This has resulted in the demonstration of devices (MOSFET) based on MoS 2 monolayer in which various short channel effects can be observed easily such as negative differential resistance (NDR) in the armchair(ANR) nanoribbon which has encouraged the device studies based on other TMD materials. MoSe 2 being one of the most promising materials among them.Despite all the robustness to the short channel effects, in two-dimensional ribbons such as graphene, silicene, germacrene and monolayer MoSe 2 , there are many minor thermodynamic defects and deformations like wrap, twist and crumpling [10][11][12]. Small magnitude of these defects can alter the behavior of MoSe 2 armchair nanoribbon channel thus affecting the performance of MoSe 2 -MOSFET device in terms of charge transport properties like transmission spectrum, band gap and the NDR characteristics.…”

“…Despite all the robustness to the short channel effects, in two-dimensional ribbons such as graphene, silicene, germacrene and monolayer MoSe 2 , there are many minor thermodynamic defects and deformations like wrap, twist and crumpling [10][11][12]. Small magnitude of these defects can alter the behavior of MoSe 2 armchair nanoribbon channel thus affecting the performance of MoSe 2 -MOSFET device in terms of charge transport properties like transmission spectrum, band gap and the NDR characteristics.…”