Synthesis and optical properties of BCxNy films deposited from N-triethylborazine and hydrogen mixture

Sulyaeva, V. S.; Rumyantsev, Yurii M.; Kesler, V. G.; Косинова, М. Л.

doi:10.1016/j.tsf.2014.12.002

Cited by 22 publications

(25 citation statements)

References 40 publications

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“…The stoichiometries of deposited films are summarized in the ternary diagram in Fig. 2 (red filled circles) and with the compositions compared to selected studies using TBBD (open circles), 5 PB (plus signs), 5 N-TEBA (filled squares), 10,11 N-TMBA (stars), 6,35 TMAB (open triangles), 13 36 and BCl 3 -CH 4 -N 2 mixtures (crosses). 37 From XPS spectra in Fig.…”

Section: Elemental Composition and Chemical Bondingmentioning

confidence: 99%

“…1 A chemical vapor deposition (CVD) process where a plasma discharge is used to activate the deposition chemistry at low thermal energy 3 is therefore favorable for BEOL processing. Several studies on plasma CVD of B-C-N films in the literature have been conducted with precursors containing B-N bonds such as: dimethylamineboron (DMAB, (H 3 C)HN:BH 3 ) 4 pyridine-borane (PB, C 5 H 5 NBH 3 ), 5 triazaborabicyclodecane (TBBD, BN(NHC 3 H 2 ) 2 ), 5 1,3,5-trimethylborazine (N-TMBA, (CH 3 ) 3 N 3 B 3 H 3 ), 6-9 1,3,5-triethylborazine (N-TEBA, B 3 H 3 (NCH 2 CH 3 ) 3 ), 10,11 tris-(dimethylamino)boron (TDMAB, B(N(CH 3 ) 2 ) 3 ), 12 triethylamineboron 7 and trimethylamineboron. 13,14 The incorporation of nitrogen in the films has been found to be important to increase the bandgap in B-C-N materials, making them more insulating.…”

Section: Introductionmentioning

confidence: 99%

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Plasma CVD of B–C–N thin films using triethylboron in argon–nitrogen plasma

et al. 2020

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Section: Elemental Composition and Chemical Bondingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plasma CVD of B–C–N thin films using triethylboron in argon–nitrogen plasma

et al. 2020

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“…The interaction between total flow and N/Ar ratio is ascribed to a higher dissociation of N2 at higher total flows, given the higher number of collisions with a higher number of molecules. Please do not adjust margins Please do not adjust margins (filled squares) 10,11 , N-TMBA (stars) 6,33 , TMAB (open triangles) 13 , B2H6-CH4-N2 mixtures (open squares) 34 and BCl3-CH4-N2 mixtures (crosses) 35 .…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

“…No correlation between the deposition parameters and the atomic composition of the films could be made. The stoichiometries of deposited films are summarized in the ternary diagram in Fig 2 (red filled circles) and with the compositions compared to selected studies using TBBD (open circles) 5 , PB (plus signs) 5 , N-TEBA (filled squares) 10,11 , N-TMBA (stars) 6,33 , TMAB (open triangles) 13 , B2H6-CH4-N2 mixtures (open squares) 34 and BCl3-CH4-N2 mixtures (crosses) 35 .…”

Section: Elemental Composition and Chemical Bondingmentioning

confidence: 99%

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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<div> Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)3) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm3 as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition. </div>

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“…In the recent years, thin film technology was applied in the field of semiconductors science. More interestingly, BCN films represented a potential material as protective and hard coatings for cutting tools and for other wear-resistance uses [8][9][10][11][12][13][14]. Drude in 1889 discussed the earliest fabrication of thin films under vacuum with unique characteristics on the glass of discharge tubes [15].…”

Section: History Of Boron Carbon Nitride (Bcn) Thin Film Technologymentioning

confidence: 99%

A brief overview of RF sputtering deposition of boron carbon nitride (BCN) thin films

2018

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A great part of interest has been paid for fabricating new materials with novel mechanical, optical, and electrical properties. Boron carbon nitride (BCN) ternary system was applied for variable bandgap semiconductors and systems with extreme hardness. The purpose of this literature review is to provide a brief historical overview of B 4 C and BN, to review recent research trends in the BCN synthesizes, and to summarize the fabrication of BCN thin films by plasma sputtering technique from B 4 C and BN targets in different gas atmospheres. Pre-set criteria are used to discuss the processing parameters affecting BCN performance which includes the gasses flow ratio and effect of temperature. Moreover, many characterization studies such as mechanical, etching, optical, photoluminescence, XPS, and corrosion studies of the RF sputtered BCN thin films are also covered. We further mentioned the application of BCN thin films to enhance the electrical properties of metal-insulator-metal (MIM) devices according to a previous report of Prakash et al. (Opt. Lett. 41, 4249, 2016).

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Synthesis and optical properties of BCxNy films deposited from N-triethylborazine and hydrogen mixture

Cited by 22 publications

References 40 publications

Plasma CVD of B–C–N thin films using triethylboron in argon–nitrogen plasma

Plasma CVD of B–C–N thin films using triethylboron in argon–nitrogen plasma

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

A brief overview of RF sputtering deposition of boron carbon nitride (BCN) thin films

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