2004
DOI: 10.1023/b:inma.0000034765.96143.57
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis and Optical Properties of CuInSe2Films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2005
2005
2018
2018

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 8 publications
0
3
0
Order By: Relevance
“…The presence of In 2 Se 3 may be due to the difference in decomposition pattern of the two complexes used as dual source, as indicated by TGA curves. In the deposition of CuInSe 2 films from the pre‐synthesized same material by vacuum evaporation, contained also either In 2 Se 3 or Cu 2 Se with CuInSe 2 depending on growth temperature . In case of preparation of nano‐material of CuInSe 2 from three sources, CuCl, InCl 3 and TOPSe, the formation of Cu 2 Se and In 2 Se 3 was also observed with the main material …”
Section: Resultsmentioning
confidence: 96%
“…The presence of In 2 Se 3 may be due to the difference in decomposition pattern of the two complexes used as dual source, as indicated by TGA curves. In the deposition of CuInSe 2 films from the pre‐synthesized same material by vacuum evaporation, contained also either In 2 Se 3 or Cu 2 Se with CuInSe 2 depending on growth temperature . In case of preparation of nano‐material of CuInSe 2 from three sources, CuCl, InCl 3 and TOPSe, the formation of Cu 2 Se and In 2 Se 3 was also observed with the main material …”
Section: Resultsmentioning
confidence: 96%
“…Besides the above mentioned reactions, Se vapor also took part in the CIS formation reaction according to the reaction: Cu 2 Se + InSe + Se 2 (gas) → 2 α‐CuInSe 2 16. The melting point of Se‐rich Cu‐Se is much lower than that of Se‐poor Cu‐Se 20, 33–35. Se‐rich Cu‐Se converted into liquid when the annealing temperature was higher than 450 °C.…”
Section: Resultsmentioning
confidence: 99%
“…The films produced from Cu precursors deposited on clean and Mo coated soda-lime glass substrates were characterised by XRF, XRD and SEM. Belevich 501 used XRF and XRD to study the growth of CuInSe 2 films. XRF was used by Chaure et al.…”
Section: Thin Films and Coatingsmentioning
confidence: 99%