Si nanowires (NWs) are grown by the vapor-liquid-solid method using Cu-Sn bimetallic catalysts in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The microstructure of the NWs is analyzed by transmission electron microscopy and energydispersive X-ray spectroscopy. An amorphous SiO 2 region, much larger than the native oxide, is present on top of each Si crystalline NW: in SiNWs with diameter below 10 nm, it takes the form of a silica NW of up to 50 nm in length. The new NW separates the initial catalyst particle into one that stays in contact with the SiNW and one or more that lies at the top of the new NW. The former is made of Cu and Cu 3 Si and contains no Sn, while the latter keeps amounts of both elements. The observed microstructure appears to be the result of a mechanism of Si oxidation catalyzed by Cu 3 Si. The deposit after SiNW growth, in the 2 PECVD reactor, of a protecting 1-nm thick layer of amorphous hydrogenated Si, completely suppresses this mechanism. This work provides reference for future applications based on Cu-Sn-catalyzed quantum-sized SiNWs.