Synthesis and properties of ferroelectric Si-doped (Bi, Nd)4Ti3O12 thin films by chemical solution deposition

Abstract

Ferroelectric Si-doped (Bi,Nd) 4 Ti 3 O 12 thin films have been prepared on Pt/TiO x /SiO 2 /Si substrates through metal-organic compounds by the chemical solution deposition. The Bi 3.25 Nd 0.75 Ti 2.9 Si 0.1 O 12 (BNTS) precursor films were found to crystallize into the Bi-layered perovskite Bi 4 Ti 3 O 12 single-phase above 600 • C. The synthesized BNTS films revealed a random orientation having a strong 117 reflection. The BNTS thin films prepared between 600 • C and 700 • C showed well-saturated P-E hysteresis loops with P r of 13-14 μC/cm 2 and E c of 100-110 kV/cm at an applied voltage of 5 V. The surface roughness of the BNTS thin films was improved by Si doping compared with that of undoped Bi 3.35 Nd 0.75 Ti 3 O 12 films.

A Novel Low Temperature Synthesis of KNN Nanoparticles by Facile Wet Chemical Method

“…The sol-gel method has been extensively used to prepare single-phase nanocrystalline powders of piezoelectric ceramics [8] [9]. In contrast with other techniques, the sol-gel process has shown considerable advantages, including excellent chemical stoichiometry, potential of homogeneous doping, easy scale-up to mass production and lower crystallization temperature due to the mixing of liquid precursors on the molecular level [10] [11].…”

Influence of different heat treatment programs on properties of sol–gel synthesized (Na0·5K0·5)NbO3 (KNN) thin films

“…sputtering (Wang et al 1998), pulsed laser deposition (PLD) (Cho and Grishin 1999) and sol-gel deposition, only the latter is cost effective for * Author for correspondence (wiegand@ca.tu-darmstadt.de) large area coatings since it is not vacuum-based (Tanaka et al 2006). A further advantage of the sol-gel process is a high homogeneity with the additional possibility of homogenous doping (Sakamoto et al 2005(Sakamoto et al , 2006. However, selection of the starting materials and processing conditions have a strong influence on the film properties, such as crystallographic phase, microstructure, and electrical properties (Yan et al 2010).…”

Chemical Processing and Characterization of Ferroelectric (K,Na)NbO3 Thin Films

“…2,[5][6][7] As a fabrication method for thin films, chemical solution deposition (CSD) using metal-organic compounds is known to be effective for achieving high homogeneity, lowtemperature fabrication, and the precise control of chemical composition, including the homogeneous doping of thin films. [8][9][10] In this process, several factors, such as the selection of starting materials and the optimization of chemical compositions as well as the processing conditions, strongly affect the crystallographic phase, crystallinity, microstructures, and electrical properties of the resultant thin films. [11][12][13][14] Although KNN thin films fabricated by CSD have been reported, 4,15) their ferroelectric properties have not been sufficiently characterized.…”