Synthesis and Properties of the Low Resistivity TiSi₂ Nanowires Grown with TiF₄ Precursor

Abstract

Low-resistivity TiSi2 nanowires were synthesized on silicon with TiF4 precursor and without catalysts. The growth was found to follow vapor−solid mechanism. The single crystalline nanowires are of C54−TiSi2 phase with the diameters and lengths being 20−50 nm and 1−2 micrometers, respectively. The field emission properties of the TiSi2 nanowires were measured, and the turn on voltage is 8 V/μm when the current density attained 1 μA/cm2. The field enhancement factor is about 800 with the measured work function of 4.6 eV. In addition, long term stability of field emission was found. The resistivity of the TiSi2 nanowire was measured to be 30 μΩ cm by the two-probe measurement. The metallic TiSi2 nanowires exhibited a failure current density of as high as 3 × 108 A/cm2. The low resistivity, high failure current density, and high field emission stability of the TiSi2 nanowires indicate that they are potentially applicable in the interconnecting electronic architectures and silicon-based field emission devices.

Direct growth of β-FeSi2 nanowires with infrared emission, ferromagnetism at room temperature and high magnetoresistance via a spontaneous chemical reaction method

“…In previous works, several sets of experimental evidence also indicated that silicide nanowires were fabricated by a vapor-solid mechanism. 26,27 In our cases, no catalyst particles were found on the tip of the nanowires, suggesting that our nanowire growth was not via the typical vapor-liquid-solid growth mechanism. 28 The growth processes of the iron silicide nanowires included two steps.…”

Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition

“…FeSi nanowires were fabricated in a high reaction concentration environment, while β-FeSi 2 nanowires were fabricated in a low one. Lots of experimental evidence indicates that the mechanism of the nanowires’ fabrication is a vapor-solid mechanism [32]. In our case, there were no catalyst particles or metal liquid droplets found on the tip of the nanowires, suggesting that the growth mechanism in our experiment was not a vapor-liquid-solid mechanism.…”

Mechanical Properties of Multifunctional TiF4 from First-Principles Calculations

“…It is an active precursor in synthesizing thin films of metal fluorides and titanium silicate. 1,2 When TiF 4 is added to TiO 2 nanocrystals, photocatalytic hydrogen production is enhanced due to a change in surface morphology. 3 Moreover, the TiF 4 additive has shown superior catalytic activity in the decomposition of MgH 2 , Mg(BH 4 ) 2 , and Mg(AlH 4 ) 2 used in hydrogen storage applications.…”

“…TiF 4 has been widely used in many technological applications. It is an active precursor in synthesizing thin films of metal fluorides and titanium silicate. , When TiF 4 is added to TiO 2 nanocrystals, photocatalytic hydrogen production is enhanced due to a change in surface morphology . Moreover, the TiF 4 additive has shown superior catalytic activity in the decomposition of MgH 2 , Mg­(BH 4 ) 2 , and Mg­(AlH 4 ) 2 used in hydrogen storage applications. − By the application of a constant shear stress to TiF 4 additives, Ti 4+ is reduced to Ti 3+ and Ti 2+ during mechanochemical processing .…”