Synthesis and Properties of ZnO/Al Thin Films Prepared by Dip-Coating Process

Abstract

− In this work sol-gel dip-coating technique was used to synthesize ZnO and ZnO/Al films. The influence of annealing regime and dopant concentration on the structural properties of ZnO and aluminum doped ZnO (ZnO/Al) films was investigated. The surface morphology and crystallinity of ZnO films were determined using atomic force microscopy and X ray diffraction, respectively. The experimental results show that ZnO and ZnO/Al films prepared using "shock" conditions have smooth surfaces and uniform grains. Increase of aluminum concentration led to grain size reduction and denser film.

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

“…Among these TCO materials, the Aluminum doped on ZnO ( AZO) thin films semiconductors are reported because of its attractive characteristics such as low resistivity, high optical transparency in the visible region, low cost, high electrical conductivity, direct transition and strong absorbance, etc. [ 2,10,[17][18][19][20][21][22][23].…”