Synthesis and substructure of oriented CuInSe2 films

Иевлев, В. М.; Belonogov, E. K.; Kharin, A. N.

doi:10.1007/pl00021877

Cited by 1 publication

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“…Apart from dielectric materials, magnetic materials, transparent conductive materials, and 2D materials, fluorphlogopite substrate was also used to grow other materials like C 60 , [ 87,88 ] BaTi 0.95 Co 0.05 O 3− δ , [ 89 ] BaTi 0.95 Co 0.05 O 3 , [ 90 ] CoFeO 4 , [ 91 ] Pt, [ 92 ] Ni, [ 93 ] Pt–Ru, [ 94 ] Pt‐Cu, [ 95 ] CuInSe 2 , [ 96 ] Cu, [ 97 ] C, [ 98 ] LiNbO 3 , [ 99 ] VO 2 , [ 100 ] and TiN. [ 101 ] These films which use fluorphlogopite as the substrate showed good performance.…”

Section: Application Of Transparent Fluorphlogopite Substrate In Flex...mentioning

confidence: 99%

Application of Transparent Fluorphlogopite Substrate in Flexible Electromagnetic Devices

et al. 2023

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Figure 11. Atomic structure of synthesized antimonene polygons. a) Schematic diagrams of the atomic structure of β-phase antimonene. b) Atomic force microscopic image of a typical triangular antimonene sheet showing the thickness of 4 nm. The scale bar is 1 mm. c) Low-magnification transmission electron microscopy (TEM) image of a well-shaped antimonene sheet transferred onto a copper grid. The scale bar is 1 um. d) Sb element mapping. Sb content is measured to be 94 wt%. The scale bar is 1 um. e) O element mapping.O is measured to be 4%. The scale bar is 1 um. f ) HRTEM image with inset showing the selected area electron diffraction pattern along the [001] zone axis. The scale bar of the HRTEM image is 2 nm. g) Enlarged image of fewlayer antimonene. The scale bar is 0.5 nm. h) Simulated HRTEM image of few-layer antimonene. The scale bar is 0.5 nm. Reproduced with permission. [86]

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