We present the full
investigation of the atomic layer deposition
(ALD) of a mixed rhenium–aluminum oxide, namely ReAl2O3CH3, a material with tunable resistance,
comprising the building unit of conductive rhenium oxides, ReO
x
. The deposition, involving methyltrioxorhenium(VII)
(MeReO3, MTO) and trimethylaluminum (TMA), was analyzed
by employing complementary in situ diagnostic quartz-crystal
microbalance (QCM), Fourier-transform infrared (FT-IR) spectroscopy,
and quadrupole mass spectrometry (QMS) to explore and reveal the underlying
growth mechanism of this material. A proposed mechanism includes reductive
elimination steps, thereby creating a stable Re(III)-containing thin
film, making this ALD process unique regarding its growth. In addition,
as proven by QMS, the surface reactions include the formation of hydrogen
and unsaturated hydrocarbons. From this straightforward process, an
extraordinarily high growth rate of 4.5 Å cycle–1 at temperatures as low as 150 °C was obtained. This material
was found to exhibit highly promising electrical properties in terms
of low thermal coefficient of resistance (TCR) in combination with
high resistivity. By blending thin films of ReAl2O3CH3 with additional layers (1, 2, or 3) of Al2O3, we were able to fine-tune the electrical resistivity
in the range of 3.9 × 106–1.5 × 1011 Ω·cm. Simultaneously, the TCR was lowered to
about −0.014 °C–1, making this material
highly resistive over a broad temperature range and a promising candidate
for advanced detector applications, e.g., multichannel plates (MCPs).