Synthesis, characterization and electrical properties of silicon-doped graphene films

Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Zhang, Wanli; Guo, Zheng; Dong, Mingdong; Li, Yanrong

doi:10.1039/c5tc00563a

Cited by 69 publications

(31 citation statements)

References 40 publications

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“…In this case, it is difficult to calculate the real channel width ( W ch ) of PtSe 2 transistors due to the nonuniform distribution of PtSe 2 nanosheets between the drain and source electrodes. The hole mobility μ = ( L ch / W ch C 0 V DS )(dI DS / dV GS ) can be calculated as 7 cm 2 V −1 s −1 as good as other 2D materials by assuming W ch = 10 μm, where C 0 is the capacitance of the SiO 2 . In fact, the W ch should be much smaller than 10 μm, thus the hole mobility should be much higher than 7 cm 2 V −1 s −1 .…”

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Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

et al. 2016

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Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

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“…However, organic semiconductors are rarely applied in high-frequency logic electronics due to the relatively low carrier mobility 3 . Graphene's 4 absence of bandgap hinders its application in logic devices, even though the bandgap can be somehow tuned 5,6 . Although layered black phosphate has been shown to possess a unique ambipolar property 7 , it hardly survives after several hours of exposure in the atmosphere due to the low reactive barrier between black phosphate and oxygen/water [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

et al. 2018

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Tungsten diselenide (WSe 2 ) has many excellent properties and provides superb potential in applications of valleybased electronics, spin-electronics, and optoelectronics. To facilitate the digital and analog application of WSe 2 in CMOS, it is essential to understand the underlying ambipolar hole and electron transport behavior. Herein, the electric field screening of WSe 2 with a thickness range of 1-40 layers is systemically studied by electrostatic force microscopy in combination with non-linear Thomas-Fermi theory to interpret the experimental results. The ambipolar transport behavior of 1-40 layers of WSe 2 transistors is systematically investigated with varied temperature from 300 to 5 K. The thickness-dependent transport properties (carrier mobility and Schottky barrier) are discussed. Furthermore, the surface potential of WSe 2 as a function of gate voltage is performed under Kelvin probe force microscopy to directly investigate its ambipolar behavior. The results show that the Fermi level will upshift by 100 meV when WSe 2 transmits from an insulator to an n-type semiconductor and downshift by 340 meV when WSe 2 transmits from an insulator to a p-type semiconductor. Finally, the ambipolar WSe 2 transistor-based analog circuit exhibits phase-control by gate voltage in an analog inverter, which demonstrates practical application in 2D communication electronics.

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“…Another chemical modification is the direct doping, the substitution of carbon host atoms by guest adatoms in the honeycomb lattice. For example, diversifying the physical and chemical properties of graphene by the silicon doping effects 68 , modifying the properties of graphene by exactly positioning atomic dopants of nitrogen or phosphorus 69 , 70 . Besides, the B C N compounds have been successfully synthesized in the stable structures of 1D nanotubes 71 and 2D layers 72 .…”

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confidence: 99%

Rich essential properties of Si-doped graphene

Nguyen

Tran

Chiu

et al. 2020

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The diverse structural and electronic properties of the Si-adsorbed and-substituted monolayer graphene systems are studied by a complete theoretical framework under the first-principles calculations, including the adatom-diversified geometric structures, the Si-and C-dominated energy bands, the spatial charge densities, variations in the spatial charge densities and the atom-and orbital-projected density of states (DOSs). These critical physical quantities are unified together to display a distinct physical and chemical picture in the studying systems. Under the Si-adsorption and Si-substitution effects, the planar geometric structures are still remained mainly owing to the very strong CC and Si-C bonds on the honeycomb lattices, respectively. The Si-adsorption cases can create free carriers, while the finite-or zero-gap semiconducting behaviors are revealed in various Si-substitution configurations. The developed theoretical framework can be fully generalized to other emergent layered materials. The Si-doped graphene systems might be a highly promising anode material in the lithium-ion battery owing to its rich potential properties. Carbon atoms can form three-dimensional (3D) diamond 1 , 3D graphites 2 , two-dimensional (2D) graphene with the pure sp 2 carbon atoms 3 , 2D graphdiyne with the unique sp-sp 2 carbon atoms 4 , one-dimensional (1D) graphene nanoribbons 5-7 , 1D carbon nanotubes 8-10 , zero-dimensional (0D) carbon toroids 11,12 , 0D C 60-related fullerenes 13 , and 0D carbon onions 14. The versatile morphologies directly indicate the peculiar chemical bondings, in which all carbon-created systems possess sp 2-bonding surfaces except for the sp 3 bondings in diamond. Specifically, the few-and multi-layer graphene systems have been manufactured using the various methods 15,16 since the first experimental observation in 2004 by mechanical exfoliation. Up to now, they clearly exhibit plenty of remarkable fundamental properties due to the hexagonal symmetry, the nanoscaled thickness, and the distinct stacking configurations, such as semiconducting and semi-metallic behaviors 17,18 , anomalous quantum Hall effects 19 , diverse magnetic quantizations 20-23 , rich Coulomb excitations and decays 24-28 , different magnetooptical selection rules 29-31 , the exceedingly high mobility of charge carriers 32,33 , and the largest Young's modulus of materials ever tested 34. To induce the novel phenomena and extend the potential applications, the electronic properties can be easily modulated by the layer number 35,36 , stacking configuration 37-39 , mechanical strain 40,41 , sliding 42 , electric and magnetic field 43,44 , atom adsorption 45-48 and substitution 49-51. This paper mainly focuses on the latter two factors. How to modulate the fundamental properties becomes one of the mainstream topics in materials science, chemistry, physics and engineering. The chemical modification is the most effective method. Pristine graphene has a rather strong σ bonding of 2s, 2p x , and 2p y orbitals in a honeycomb lattice. This...

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Synthesis, characterization and electrical properties of silicon-doped graphene films

Cited by 69 publications

References 40 publications

Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Rich essential properties of Si-doped graphene

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Synthesis, characterization and electrical properties of silicon-doped graphene films

Cited by 69 publications

References 40 publications

Facile Synthesis of Single Crystal PtSe2 Nanosheets for Nanoscale Electronics

Facile Synthesis of Single Crystal PtSe2 Nanosheets for Nanoscale Electronics

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Rich essential properties of Si-doped graphene

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Product

Resources

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Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics

Facile Synthesis of Single Crystal PtSe₂ Nanosheets for Nanoscale Electronics