Synthesis, characterization and photoluminescence studies of Mn doped ZnS nanoparticles

Chandrakar, Raju Kumar; Baghel, R.N.; Chandra, Vivek; Chandra, B. P.

doi:10.1016/j.spmi.2015.07.043

Cited by 76 publications

(17 citation statements)

References 55 publications

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“…It has great potential for optoelectronic devices for instance solar cells, blue light diodes and antireflection coating for infrared windows. [13][14][15][16] Because of the exceptional electro and photo luminescent properties, it is a focal phosphor material for many applications like lasers, sensors and displays. It is also a prospective candidate for bio imaging applications, due to nonlinear optical multi photon absorption characteristics in visible and infrared wavelength regimes.…”

Section: Introductionmentioning

confidence: 99%

Richardson-Schottky transport mechanism in ZnS nanoparticles

et al. 2016

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We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

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Section: Introductionmentioning

confidence: 99%

Richardson-Schottky transport mechanism in ZnS nanoparticles

et al. 2016

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“…Four main regions that are of interest in 1-cyano-1-carboethoxyethylene-2,2-dithiolato (CED) complexes are: the 2188-2244 cm À 1 which is due to v(C≡N); 1645-1700 cm À 1 which is due to v(C¼O); 1412-1492 cm À 1 due v(C¼CS 2 ) and 1116-1165 cm À 1 due to v(C-S) of the chelated CED 2À [28]. In the metal complexes, these stretching vibrations were observed at 2209, 1705, 1448 and 1188 cm À 1 for [Zn(dmtu) 2 …”

Section: Spectroscopic Studies Of the Precursor Complexesmentioning

confidence: 95%

“…The study of group II-VI semiconductor nanomaterials have received considerable attention in recent years because of their potential applications in light-emitting diodes (LEDs), electroluminescence devices and bright photostable marker for biological system [1,2]. ZnS and CdS are important members of this group of materials and they have wide band gaps of 3.65 eV (ZnS) and 2.40 eV (CdS) respectively [3].…”

Section: Introductionmentioning

confidence: 99%

Morphology and thermal studies of zinc sulfide and cadmium sulfide nanoparticles in polyvinyl alcohol matrix

Osuntokun

Ajibade

2016

Physica B: Condensed Matter

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“…]/[Zn 2? ]) varied in the range (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) at.% with a step of 6 at.%.…”

Section: Experimental Details 21 Materialsmentioning

confidence: 99%

“…ZnS compound is a promoting candidate for a large variety of applications including photonic crystal sensors [3], optical filters [4], light-emitting diodes [5], anti-reflection coatings [6], electroluminescent devices [7], flat panel displays, phosphors [8] and photovoltaic cells [5]. Various synthetic methods have been employed to synthesize ZnS thin films, such as metal organic chemical vapor deposition (MOCVD) [9], sol-gel deposition [10], radio frequency (RF) magnetron sputtering [11], thermionic vacuum arc [12], molecular beam epitaxy (MBE) [13], pulsed laser deposition (PLD) [14], successive ionic layer adsorption and reaction (SILAR) [15] and chemical bath deposition (CBD) [16].…”

Section: Introductionmentioning

confidence: 99%

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

Jrad

Naffouti

Nefzi

et al. 2016

J Mater Sci: Mater Electron

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ZnS:Cu thin films were deposited on glass substrates by chemical bath deposition technique. The structural, morphological, optical and electrical properties of the grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectrometry, scanning electron microscopy, spectrophotometry, spectrofluorimetry and Hall effect measurements. Both XRD and Raman analysis indicated the coexistence of both sphalerite ZnS and covellite CuS with cubic and hexagonal structures, respectively. The optical band gap of the films increased from 3.70 to 3.75 eV with Cu concentration increment. Photoluminescence studies revealed that the incorporation of Cu 2? ions in ZnS matrix blue shifted and quenched the emission bands. Electric resistivity, volume carrier concentration, surface carrier concentration and Hall mobility were determined from Hall effect measurements. Indeed, for pure sample, the obtained values were about 7.586 9 10 4 X cm, 1.472 9 10 11 cm -3 , 2.944 9 10 6 cm -2 and 5.590 9 10 2 cm 2 V -1 s -1 , respectively. However, after Cu incorporation, these values varied in the range of (2.273 9 10 4 -13.80 9 10 4 ) X cm, (2.334 9 10 11 -9.094 9 10 13 ) cm -3 , (4.668 9 10 6 -1.819 9 10 9 ) cm -2 and (3.092 9 10 -1 -1.937 9 10 2 ) cm 2 V -1 s -1 , respectively.

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Synthesis, characterization and photoluminescence studies of Mn doped ZnS nanoparticles

Cited by 76 publications

References 55 publications

Richardson-Schottky transport mechanism in ZnS nanoparticles

Richardson-Schottky transport mechanism in ZnS nanoparticles

Morphology and thermal studies of zinc sulfide and cadmium sulfide nanoparticles in polyvinyl alcohol matrix

Effect of copper concentration on the physical properties of ZnS:Cu alloys prepared by chemical bath deposition

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