2016
DOI: 10.1007/s10853-016-0169-0
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Synthesis, growth mechanism, and photoluminescence property of hierarchical SnO2 nanoflower-rod arrays: an experimental and first principles study

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Cited by 11 publications
(7 citation statements)
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“…This value is nearly the same as that of 0.39 eV, as reported by Mrabet et al [ 11 ]. In addition, the emission peak at 439 nm (2.83 eV) can be assigned to the electron transition from the donor level formed by to the valance band, which is accordance with that of 2.84 eV, as reported by Xu et al [ 40 ]. The level formed by always lies slightly above the valence band [ 21 , 22 , 23 , 24 ].…”
Section: Resultssupporting
confidence: 87%
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“…This value is nearly the same as that of 0.39 eV, as reported by Mrabet et al [ 11 ]. In addition, the emission peak at 439 nm (2.83 eV) can be assigned to the electron transition from the donor level formed by to the valance band, which is accordance with that of 2.84 eV, as reported by Xu et al [ 40 ]. The level formed by always lies slightly above the valence band [ 21 , 22 , 23 , 24 ].…”
Section: Resultssupporting
confidence: 87%
“…It is known that is a shallow donor level that is located near the conduction band [ 39 , 40 , 41 ]. In this work, we found that the near-band-edge (NBE) emission at 375 nm (~3.31 eV) can be attributed to the electron transition on the level to the valence band.…”
Section: Resultsmentioning
confidence: 99%
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“…4b) revealed that on the surface the atomic ratio Sn:O was 50.7:49.3, which indicated that the synthesis procedure resulted in a depletion of the superficial O content. According to Xu et al, 33 this nonstoichiometric proportion can be associated with the formation of oxygen vacancy (V O ) defects.…”
Section: Resultsmentioning
confidence: 99%
“…Among all these point defects described above, oxygen vacancies caused by oxygen-poor conditions are the most abundant intrinsic defects occurring in SnO 2 nanomaterials because of the lowest formation enthalpy [ 100 ]. Moreover, many studies [ 105 , 106 , 107 , 108 , 109 , 110 ] have probed these new energy levels via photoluminescence (PL) spectroscopy. As previously mentioned, unstable V O × vacancy acts as a donor level and is located at 0.03 eV, just under the conduction band.…”
Section: Electronic Structure Of Snomentioning
confidence: 99%