2015
DOI: 10.1016/j.jallcom.2015.07.197
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Synthesis of Al-doped Mg2Si1−xSnx compound using magnesium alloy for thermoelectric application

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Cited by 16 publications
(8 citation statements)
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“…The case of Al diffusion into n-type Mg 2 (Si,Sn) was already discussed in a previous work, where no gradient was found after contacting with non-coated Al foils [30], similarly to the first results in this work (see line scans in SI). It also appears that Al is a poor dopant for this material system as shown in [49][50][51][52][53]. It is, therefore, unlikely that the diffusion of Al into the n-type TE material is at the origin of the change in carrier concentration.…”
Section: Discussionmentioning
confidence: 92%
“…The case of Al diffusion into n-type Mg 2 (Si,Sn) was already discussed in a previous work, where no gradient was found after contacting with non-coated Al foils [30], similarly to the first results in this work (see line scans in SI). It also appears that Al is a poor dopant for this material system as shown in [49][50][51][52][53]. It is, therefore, unlikely that the diffusion of Al into the n-type TE material is at the origin of the change in carrier concentration.…”
Section: Discussionmentioning
confidence: 92%
“…Several attempts to synthesize Mg 2 Si 1-x Sn x by mechanical alloying in the past have resulted in the formation of either multi-phase or impure materials [29][30][31][32][33][34] . Only recently, high energy ball milling combined with a compaction step has been employed successfully to obtain n-type Mg 2 Si as well as n-and p-type Mg 2 (Si,Sn) 19,20,35,36 .…”
Section: Introductionmentioning
confidence: 99%
“…Several attempts to synthesize Mg 2 Si 1– x Sn x by mechanical alloying in the past have resulted in the formation of either multiphase or impure materials. Only recently, high energy ball milling combined with a compaction step has been employed successfully to obtain n-type Mg 2 Si as well as n- and p-type Mg 2 (Si,Sn). ,,, So, on the basis of the previous reports it is clear that high energy ball milling is an efficient and attractive synthesis route; however, an understanding of Mg 2 Si 1– x Sn x phase formation and its underlying mechanism is still missing. Therefore, a detailed phase formation analysis to comprehend the synthesis mechanism was performed.…”
Section: Introductionmentioning
confidence: 99%
“…Many conventional thermoelectric materials including alloys based on BiSbTe [13,14], PbTe [15,16], PbSe [17], skutterudite (based-on CoSb 3 ) [18], clathrate [19], Zintl [20] and half-Heusler alloys [21][22][23][24][25][26][27][28][29][30] are reported in the literature. Among these materials, recent works showed that Mg 2 X (X = Si, Sn, Ge) materials are potential interesting candidates as n-or p-type thermoelectric semiconductors at mid-temperature (500-800 K), depending on the nature of X [23][24][25][26][27][28][29][30][31]. These compounds are interesting due to their good thermoelectric performance, the abundance of toxic elements, very low thermal conductivity, good thermal and mechanical stability, but also lightweight in its component elements [24,32].…”
Section: Introductionmentioning
confidence: 99%