Synthesis of aluminium and gallium fluoroalkoxide compounds and the low pressure metal-organic chemical vapor deposition of gallium oxide films

Mı̂inea, Liliana A.; Suh, Seung Wan; Bott, Simon G.; Liu, Jiarui; Chu, Wei‐Kan; Hoffman, David M.

doi:10.1039/a808460b

Cited by 56 publications

(55 citation statements)

References 10 publications

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“…[36] Ga-doped zinc oxide (ZnO:Ga, GZO) is a wellknown n-type TCO material. [37] Thin films of gallium oxide have been prepared by various methods: (radiofrequency) magnetron sputter deposition, [1][2][3][4]6,7,9,10,12,25,27] electron beam evaporation, [15][16][17]21] pulsed laser deposition, [26,28,30,33,34,36] laser ablation, [31] CVD, [38][39][40][41][42][43][44][45][46][47] ALD, [48][49][50][51][52] molecular beam epitaxy, [32,35] vapor phase epitaxy, [53] spray pyrolysis, [54,55] and sol-gel process. [5,13,23,24] Among these methods, CVD is considered very important because it can readily be employed in industrial processes.…”

Section: Introductionmentioning

confidence: 99%

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Lee

Kim

Woo

et al. 2011

Chemical Vapor Deposition

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Thin films of gallium oxide (Ga 2 O 3 ) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal-organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non-pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280-300 8C with a growth rate of $0.3 Å per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga 2 O 3 , films are grown in the temperature range 450-6258C with the apparent activation energy of 225.5 kJ mol À1. This study shows that DMGIP can be utilized as a new source for the preparation of Ga 2 O 3 thin films.

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Section: Introductionmentioning

confidence: 99%

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Lee

Kim

Woo

et al. 2011

Chemical Vapor Deposition

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“…(1)]. For example, the 13 C NMR resonance of the a carbon of octylamine at d = 42.7 ppm showed detectable broadening in the presence of Al tert-butoxide (Figure 2, spectrum a). The peak broadened further at À30 8C (spectrum b).…”

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confidence: 96%

“…After this dried solid had been refluxed in propylamine twice and then dried, a propylamineexchanged sample (IV) was obtained, which gave the DRIFT spectrum in Figure 4 b. The intensity of the C-H stretching band decreased substantially, although residual tBu groups were still evident in the 13 C MAS NMR spectrum. The peaks at n = 1595, 1463, 1280, and 1253 cm À1 could be assigned to propylamine bound to Lewis acid sites.…”

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confidence: 99%

“…The 1 H NMR spectrum of the monomer showed only one singlet at about d = 1.47 ppm ( Figure 1). The transformation to the monomer was also supported by 13 C NMR spectroscopy. For the dimer [Al(OtBu) 3 ] 2 in toluene, the bridging tert-butyl groups gave rise to resonances at d = 31.5 and 76.2 ppm due to the methyl groups and the tertiary carbon, respectively, whereas the terminal tert-butyl groups gave rise to resonances at d = 34.0 and 69.1 ppm.…”

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confidence: 99%

“…This method of preparing the amine-aluminum alkoxide monomer I is significantly simpler than the previously reported alcoholysis of [Al(NMe 2 ) 3 ] 2 . [12,13] At 25 8C primary amines bound to Al tert-butoxide exchange rapidly with the free amine in solution [Eq. (1)].…”

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confidence: 99%

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A “Soft‐Chemical” Method To Synthesize Lewis Acid Surfaces of Aluminum Oxide

Козлов¹,

Kung²,

Xue³

et al. 2003

Angew Chem Int Ed

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Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Winter

Zheng

El‐Kaderi

2005

Encyclopedia of Inorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition methods. The major emphasis is on precursors that have been reported since 1994, and corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4–11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation, owing to the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity, owing to the importance of several mixed oxide phases and the importance of zirconium and hafnium oxide for high permittivity gate materials in microelectronics devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronics devices. The deposition of copper metal films from metal‐organic precursors is driven by the urgent need for copper metallization procedures in microelectronics device manufacturing. The current state of metal‐organic precursor development is presented for each of the other metallic elements.

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Synthesis of aluminium and gallium fluoroalkoxide compounds and the low pressure metal-organic chemical vapor deposition of gallium oxide films

Cited by 56 publications

References 10 publications

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

A “Soft‐Chemical” Method To Synthesize Lewis Acid Surfaces of Aluminum Oxide

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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Synthesis of aluminium and gallium fluoroalkoxide compounds and the low pressure metal-organic chemical vapor deposition of gallium oxide films

Cited by 56 publications

References 10 publications

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

A “Soft‐Chemical” Method To Synthesize Lewis Acid Surfaces of Aluminum Oxide

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr