Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

Wu, Xingcai; Song, Wenhai; Zhao, Boyang; Huang, Weimin; Pu, M.H.; Sun, Yanbin; Du, Juan

doi:10.1016/s0038-1098(00)00255-6

Cited by 74 publications

(39 citation statements)

References 16 publications

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“…Nanoscale materials, such as carbon nanotubes, 1−3 nanowires 4−6 and nanocables, 7 have attracted increased attention due to their valuable electrical and optical properties, as well as their potential application to nanoscale devices. 8−9 However, most of these materials, either semiconductors or metals, are incompatible with the working medium, i.e., polymers or smaller organic molecules, required by potentially cheap and flexible organic electronic devices.…”

mentioning

confidence: 99%

Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

Liu

Xue

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Organic nanowires and quasi-two-dimensional chiral patterns of tetracyanoquinodimethane have been successfully generated by vacuum thermal evaporation. The nanowires and patterns were characterized by using atomic force microscopy and transmission electron microscopy. The influence of electric charged clusters, deposition rate, and substrate temperature were experimentally investigated. Contrary to previous reports, charged clusters are found to be unnecessary to the chiral pattern formation. It was shown that the nanowire and pattern formation should be mainly dominated by its special crystallization properties, though the effect of the growth conditions cannot be neglected.

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mentioning

confidence: 99%

Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

Liu

Xue

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In particular, the fabrication of one dimensional nanowires, nanorods, and nanofibers of ceramics such as silicon nitride has been investigated intensively [5][6][7][8][9][10][11][12][13][14][15][16]. Silicon nitride has many attractive properties including high strength, hardness, and resistance to thermal shock and oxidation.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Silicon Nitride Nanofibers Synthesized Using Silica Nanopowders and Silica Gel

Deshmukh¹,

Jen²,

Santhanam³

2012

MSA

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Nanofibers of alpha silicon nitride were grown by a vapor-solid mechanism at 1450˚C, through the carbothermal reduction process. Two different precursor silica sources were used: silica nanopowders and silica gel. The effect of processing geometry, particularly the stacking orientations of the graphite substrates, silica pellets, and crucibles, on the density of nanofiber growth was also explored. The silicon nitride nanofibers appear with a predominantly rectangular cross section from silica nanopowder precursors and with a circular cross section for silica gel precursors. Silica gel precursors produce nanofiber products that are smaller in cross section but greater in length than the products from silica nanopowder precursors. The processing geometry must be suitably designed such that the vapor-solid mechanism that is responsible for the formation of the nanofibers is not disrupted.

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“…Synthesis of silicon carbide wires of nanometer diameters is of interest because of the unique mechanical, optical, electronic, and other properties of these nanowires. There are three main growth mechanisms of SiC nanowires: (A) vapor-liquid-solid (VLS) [1,2], (B) template-assisted growth from carbon nanotubes (CNTs) [3][4][5][6] and silicon nanowires [7], and (C) vaporsolid mechanism from nanostructured carbon particles [8,9], silica [10], silicon [11], and silicon carbide [12]. The mechanism of formation of SiC nanowires (SiC NW) from carbon nanotubes has not been fully characterized.…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Nanowires Synthesis and Preliminary Investigations

et al. 2010

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As the field of biotechnology expands and the semiconductor industry approaches the limit of size reduction with conventional materials, these and other fields will increasingly rely on nanomaterials with novel properties. Silicon carbide (SiC) possesses many properties that make it appealing to research and industry: a large band gap, high hardness, high strength, low thermal expansion, chemical inertness, etc. It is known that silicon carbide nanowires can be synthesized through a reaction between silicon vapor and multiwalled carbon nanotubes. This process was refined to produce smaller, straighter nanowires. This was done by analyzing the dependence of the reaction rate on the partial vapor pressure of silicon. The reaction rate was studied by comparison of SiC and multiwalled carbon nanotubes peak intensities in X-ray diffractograms, which produced an estimate of the respective reactions' SiC yields. The particle morphologies were then analyzed with transmission electron microscopy. Finally, Fourier transform infrared spectroscopy was utilized to study the intensities and frequencies of the SiC infrared absorption bands. This data was analyzed with respect to the previously determined yield and particle sizes of the respective SiC nanowire samples.

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Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

Cited by 74 publications

References 16 publications

Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

Comparison of Silicon Nitride Nanofibers Synthesized Using Silica Nanopowders and Silica Gel

Silicon Carbide Nanowires Synthesis and Preliminary Investigations

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