Synthesis of Crystalline Carbon Nitride Nanocone Arrays by Direct‐Current Discharge Plasma‐Assisted CVD

Abstract

Crystalline carbon nitride nanocone (CNNC) arrays are prepared by a rather simple and facile direct current, abnormal glow discharge plasma-assisted (PA) CVD method. The CNNCs are grown on the surfaces of (100) silicon wafers covered by Co/Ni intermediate layers. The experiments are carried out in an atmosphere of mixtures of methane and nitrogen, under a total pressure of 4000 Pa, and CH 4 /N 2 pressure ratios in the range 1:50-1:5. The as-grown CNNCs are vertically aligned in arrays with rather perfect crystallinity, and smallest tip diameters of 2-3 nm. Based on the optical emission spectra from the abnormal glow discharge plasma, the growth mechanism of the as-grown CNNCs is discussed.

Growth of Single-Crystalline Silicon Nanocone Arrays by Plasma Sputtering Reaction Deposition

“…In this step, the Ni-coated substrates (as cathode) were placed just below the tapered tungsten tip (as anode). [17] Before the discharge, the CH 4 , N 2 and H 2 mixed gas [N 2 :H 2 =1:10, CH 4 /(N 2 +H 2 )=1/5-1/40] was introduced into the discharge chamber. The abnormal glow discharge lasted 45 min for all the samples with the discharge voltage and current of 350 V and 180 mA, respectively.…”