2022
DOI: 10.15251/jor.2022.182.205
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Synthesis of CuO/SnO2 NPs on quartz substrate for temperature sensors application

Abstract: Temperature sensor of p-CuO/n-SnO2 heterojunction was successfully fabricated and investigated. SnO2 nanostructure was firstly synthesized via chemical vapor deposition. Followed by a top layer of CuO nanoparticles was deposited on SnO2 by drop cast method. The SnO2 film was analyzed via x-ray diffraction (XRD) and scanning electron microscope (SEM). The XRD confirms the formation of the SnO2 nanstructure .The SEM reveals the SnO2 nanoparticles agglomerated together forming a cauliflowers-like nanostructure wi… Show more

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Cited by 13 publications
(5 citation statements)
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“…The improvement observed in the conductivity (DC) of the film formed at 623 K is caused by the common effect of grain size changes. Furthermore, when temperature or particle size increases, the fluctuation in electrical conductivity correlates with variations in optical characterisation, such as decreased values of the energy gap, [78][79][80] t RA 12 dc ( ) s =…”
Section: Resultsmentioning
confidence: 99%
“…The improvement observed in the conductivity (DC) of the film formed at 623 K is caused by the common effect of grain size changes. Furthermore, when temperature or particle size increases, the fluctuation in electrical conductivity correlates with variations in optical characterisation, such as decreased values of the energy gap, [78][79][80] t RA 12 dc ( ) s =…”
Section: Resultsmentioning
confidence: 99%
“…where K is Scherrer's constant equal to 0.94 (depends on the crystal shape, equals 1 for spherical shape), λ is the wavelength of the x-ray and equals 0.15406 nm, β is the (FWHM) full width at half maximum of the peak (in Radians), and θ B represents the position of the peak. The dislocation density (δ) was calculated using [22][23][24]…”
Section: Resultsmentioning
confidence: 99%
“…The benefits mentioned above contribute to developing GaN-based optoelectronic devices that exhibit extraordinary frequency and temperature capabilities, low inherent noise and dark current, and Ionizing radiation sensitivity. [38,39]. These devices have critical applications in the industrial, military, and space sectors [40,41].…”
Section: Theoretical Backgroundmentioning
confidence: 99%