Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method

Daigo, Yoshiaki; Mutsukura, Nobuki

doi:10.1016/j.tsf.2004.12.017

Cited by 22 publications

(15 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaN films were deposited by 13.56 MHz, radio frequency (rf) magnetron reactive sputtering of a 3 inch GaAs target with 100% nitrogen as sputtering-cum-reactive gas, as described in detail, elsewhere [42]. An rf shielded heater was used to control substrate temperature up to (700 ± 10)°C.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

et al. 2008

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 99%

“…The growth of GaN films has also been reported [29,39] by reactive sputtering of a GaAs target with 100% nitrogen. Magnetron sputtering has also been utilized to deposit epitaxial GaN films on sapphire substrates [40][41][42].…”

Section: Introductionmentioning

confidence: 99%

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

et al. 2008

View full text Add to dashboard Cite

“…Magnetron sputtering has also been utilized to deposit epitaxial GaN films on a sapphire substrate. [25][26][27] The inherent ability of sputtering to deposit large area films on a variety of substrates at low temperatures opens up enormous opportunities for a robust semiconductor, such as GaN and III-nitrides in general, for potential applications in optoelectronics, photonics, white lighting, and photovoltaics. We have earlier reported 28 on the reactive sputtering of a GaAs target in 100% nitrogen, which resulted in practically arsenic-free gallium nitride films, deposited at about 500°C on quartz substrates and subsequently on nanocrystalline GaN films deposited by the same approach.…”

Section: Introductionmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

View full text Add to dashboard Cite

GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300°C are amorphous and As rich. Above 300°C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700°C, GaN films, practically free of amorphous phase, and As (<0.5at.%) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500°C, the surface diffusion between planes dominates and results in the (101¯1) preferred orientation. Above 500°C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

show abstract

“…Higher electron mobility and electron saturation velocity allow for higher frequency of operation, and fast responsivity. 3,4 To date, the synthesis of different types of GaN materials have been performed by using various technical routes, including pulsed laser deposition techniques, 5 electrochemical techniques, 6 hot filament chemical vapor deposition (HFCVD), 7 plasma enhanced CVD, 8 sputtering method, 9 spin coating method, 10 and molecular beam epitaxy (MBE), [11][12][13][14] among others.…”

Section: Introductionmentioning

confidence: 99%

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

View full text Add to dashboard Cite

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

show abstract

Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method

Cited by 22 publications

References 36 publications

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Growth and structure of sputtered gallium nitride films

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Contact Info

Product

Resources

About