Synthesis of GaN cauliflowers by ammoniating Ga2O3

Bao, Ke; Wang, Liangbiao; Yan, Jun; Sun, Hongxian; Guo, Rui; Wu, Yapei

doi:10.1016/j.jallcom.2012.10.093

Cited by 10 publications

(4 citation statements)

References 39 publications

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“…The Ga 2p 3/2 spectra of the tested samples are described by a single symmetric peak with the binding energy in the region of 1117.9 eV. According to the literature, [21][22][23] position of the peak corresponds to gallium in the Ga 3+ state. The state of To identify correctly the manganese state, it is necessary to take into account also the shape of Mn 2p spectrum, specically, the intensity and relative position of shake-up satellites, the presence of which is determined by multielectron processes.…”

Section: Resultsmentioning

confidence: 91%

Nonstoichiometric oxygen in Mn–Ga–O spinels: reduction features of the oxides and their catalytic activity

et al. 2018

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Section: Resultsmentioning

confidence: 91%

Nonstoichiometric oxygen in Mn–Ga–O spinels: reduction features of the oxides and their catalytic activity

et al. 2018

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“…The reduction of the intensity of the O 1s core level state, but not its elimination like the C 1s, suggests that O is present in the GaN. The higher binding energy of the O 1s core level state of the as-grown sample in Figure 3b, is attributed to Ga-O bonding on the surface, while the O 1s binding energy of 532.2 eV after sputtering is attributed to chemisorbed oxygen or hydroxyl species [51][52][53][54]. The oxygen in the bulk is considered to be an unintentional n-type doping [55] and its impact on the electrical properties of the GaN TF and GaN coated NS will be discussed.…”

Section: Resultsmentioning

confidence: 91%

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

et al. 2020

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

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“…In Fig. 8a, b, Pd/Au catalyst- Raman selection rules for wurtzite materials suggest the presence of A 1 (TO), A 1 (LO), E 1 (TO), E 1 (LO), E 2 (high) and E 2 (low) modes with frequency at 533, 735, 559, 743, 569 and 145 cm -1 , respectively [7]. Cu catalyst-assisted GaN NWs show the presence of modes at 533, 569 and 734 cm -1 which correspond to transverse optical A 1 (TO), energetic position of the nonpolar E 2 (high) and longitudinal optical A 1 (LO) phonon modes, respectively (Fig.…”

Section: Materials Characterizationmentioning

confidence: 92%

Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts

et al. 2016

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Systematic reaction has been used to control the vapor-liquid-solid growth of gallium nitride nanowires (NWs) using different catalysts. GaN NWs were grown using Cu, Au, Pd/Au alloy catalysts on c-plane sapphire substrate. XRD and Raman analysis revealed the crystalline wurtzite phase of GaN synthesized at 900°C. High density GaN NWs were studied using SEM and HRTEM. Elemental composition and impurities were analyzed by EDX. Diameter of individual NW, grown using Au catalyst is found to be *50 nm. The diameter of NWs grown with the help of Cu catalyst was found to be *65 nm, whereas with Pd/Au catalyst, the diameter was about 100-200 nm. NBE emission observed from PL spectra for Cu catalyst (377 nm), Au catalyst (372 nm) as well as Pd/Au catalyst (385 nm) growth of GaN NWs respectively has been presented and discussed.

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Synthesis of GaN cauliflowers by ammoniating Ga2O3

Cited by 10 publications

References 39 publications

Nonstoichiometric oxygen in Mn–Ga–O spinels: reduction features of the oxides and their catalytic activity

Nonstoichiometric oxygen in Mn–Ga–O spinels: reduction features of the oxides and their catalytic activity

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts

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