Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts

Abstract

Systematic reaction has been used to control the vapor-liquid-solid growth of gallium nitride nanowires (NWs) using different catalysts. GaN NWs were grown using Cu, Au, Pd/Au alloy catalysts on c-plane sapphire substrate. XRD and Raman analysis revealed the crystalline wurtzite phase of GaN synthesized at 900°C. High density GaN NWs were studied using SEM and HRTEM. Elemental composition and impurities were analyzed by EDX. Diameter of individual NW, grown using Au catalyst is found to be *50 nm. The diameter of NWs grown with the help of Cu catalyst was found to be *65 nm, whereas with Pd/Au catalyst, the diameter was about 100-200 nm. NBE emission observed from PL spectra for Cu catalyst (377 nm), Au catalyst (372 nm) as well as Pd/Au catalyst (385 nm) growth of GaN NWs respectively has been presented and discussed.