Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

Abstract

Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (U-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 Â 10 3 X ٗ whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm 2 . Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications. V C 2015 AIP Publishing LLC. [http://dx

Evolution of Structural and Electrical Properties of Carbon Films from Amorphous Carbon to Nanocrystalline Graphene on Quartz Glass by HFCVD

“…Besides, obvious decrease of carrier concentration can be found as the H 2 dilution ratio increases to over 80%. The nanocrystalline graphene films deposited on glass with a H 2 dilution ratio of 90% exhibit good electrical performance with a carrier mobility of 36.76 cm 2 /(V s) and a resistivity of 5.24 × 10 –3 Ω cm over an area of 1 cm 2 , which is comparable to those reported by other methods. , …”

“…The nanocrystalline graphene films deposited on glass with a H 2 dilution ratio of 90% exhibit good electrical performance with a carrier mobility of 36.76 cm 2 /(V s) and a resistivity of 5.24 × 10 −3 Ω cm over an area of 1 cm 2 , which is comparable to those reported by other methods. 55,56 For the purpose of interpreting the difference of carrier mobility and carrier concentration between the a-C films and nanocrystalline films, temperature-dependent resistance was measured to explore the conductive mechanisms. For carbon films deposited with the H 2 dilution ratio of 50%, one can find that the contact between copper electrodes and carbon films is ohmic contact since the variation of I−V is all linear under different temperatures, as shown in Figure 6a.…”

Fast and Cost-Effective Synthesis of High-Quality Graphene on Copper Foils Using High-Current Arc Evaporation

“…This deposition can be optimized for different substrate materials by several external parameters such as pressure and composition of background gas, temperature, impinging angle, and deposition rate. Using this technique, the deposition of transparent and conductive graphene-like carbon coatings on Insulators is also possible [ 17 ].…”

Mangifera indica, Ficus religiosa and Polyalthia longifolia leaf extract-assisted green synthesis of graphene for transparent highly conductive film

“…32 Recently, Lux et al have presented a reliable process to deposit TCFs by a vacuum arc system on silicon oxide, quartz, and sapphire using a solid carbon source and have obtained R s of 5.7 kU , À1 and T of 88%. 33 Apart from these processes, spray coating is an effective technique for the deposition of TCFs of small grain size graphene platelets synthesized by a solution-processable method for better optoelectrical signatures.…”