Synthesis of graphene on silicon carbide substrates at low temperature

Synthesis graphene layer at different waste cooking palm oil temperatures

“…1(c) was lead to the changed of shapes and different densities of the samples [7]. Figure 1(d) display hexagonal shapes since the graphene layers were formed after precipitation of the carbon [8]. Corresponding to Gutierrez et al, similar shape variations have been reported for the CVD graphene grown on copper [7].…”

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

“…Ru is observed to react with 6H-SiC, and is found at 2300 x 10 15 at./cm 2 from the surface (Fig.6) after annealing at 1000 o C. Raman analysis of the thin film sample (Fig. 7) shows the formation of graphite as indicated by a typical carbon D peak at 1354 cm -1 and G peak at 1589 cm -1 [12,13,14,15,16,17] . The intensity ratio of the D and G peak are used to approximate the size of the crystalline graphite or degree of disorder of the graphite .…”

“…The intensity ratio of the D and G peak are used to approximate the size of the crystalline graphite or degree of disorder of the graphite . The D band is generally thought to be an indication of disordered or defective hexagonal planar graphite structures [12]. The G band originates from the stretching vibrations in the basal plane of ideal graphite, and a combination of D and G bands is generally regarded as an indication of polycrystalline graphitic structures [13].…”

Synthesis of Graphene on Ni/SiC Structure

“…Very promising is the synthesis of graphene on SiC substrates at a relatively low temperature [7] based on the carbon segregation from a metal layer saturated by carbon. This technique utilizes a Ni/SiC structure.…”