Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters

Liu, Hongwei; You, Chae Young; Li, Jingwei; Galligan, Patrick Ryan; You, Jiawen; Liu, Zhenjing; Cai, Yuting; Luo, Zhengtang

doi:10.1016/j.nanoms.2021.03.002

Cited by 43 publications

(28 citation statements)

References 145 publications

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“…hBN SPEs operate at room temperature and some have outstanding optical properties including high brightness, linear polarization, and access to the spin states of some of the defects. − The emitters are associated with intrinsic structural defects and extrinsic impurities in the lattice and are found in many varieties of hBN samples, including those grown by the high-pressure, high-temperature method, chemical vapor deposition, and MOVPE. − Numerous distinct defect-related quantum emitters have been identified in hBN. The various SPEs display a wide range of photophysical properties, including emission wavelength, brightness, stability, and spin properties.…”

Section: Introductionmentioning

confidence: 99%

Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride

Gale

Chen

et al. 2022

ACS Photonics

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Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near-infrared spectral ranges. However, the atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV). We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV). We attribute blue emitter generation to the fragmentation of carbon clusters by electron impact and show that the robustness and universality of the emitter fabrication technique are enhanced by a pre-irradiation annealing treatment. Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for site-specific fabrication of quantum emitters in hBN.

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Section: Introductionmentioning

confidence: 99%

Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride

Gale

Chen

et al. 2022

ACS Photonics

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“…One appealing bottom-up technique frequently utilized for 2D material growth is chemical vapor deposition (CVD). The CVD method possesses intrinsic advantages for targeted applications, such as the synthesis of large-area films with controlled thickness down to monolayers. − Additionally, controlling CVD growth conditions has proved effective in modulating the emission properties of incorporated SPEs and enabled the direct growth of hBN SPEs on prefabricated dielectric substrates such as pillars and waveguides. , …”

Section: Introductionmentioning

confidence: 99%

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride

Liu

Mendelson

Abidi

et al. 2022

ACS Appl. Mater. Interfaces

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Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B–C bonds and 1.6-fold for N–C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.

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“…The study of two-dimensional (2D) van der Waals (vdW) materials represented by graphene is one of the most interesting research topics because of their extraordinary solid-state physics − and application potential for next-generation nanoelectronics. , However, graphene as a zero band gap semimetal fails to play a role as a semiconducting active channel in electronics. Transition metal dichalcogenides (TMDs), with a layered structure similar to that of graphene, complement this disadvantage.…”

Section: Introductionmentioning

confidence: 99%

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

et al. 2022

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In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.

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Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters

Cited by 43 publications

References 145 publications

Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride

Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

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