Synthesis of high-quality octahedral cBN crystals with large size using lithium metal as a catalyst

Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals

“…The linear temperature dependence f T1 (T) (solid blue line), which fits the 1/T 1 data (squares) only at T < 60 K, evidences the presence of QC. As can be seen in Figure 8a, the variation of the Sn1 CESR line amplitude A 1 with temperature is well fitted with the formula: (9) where the parameters A 0 and a are given in arbitrary units in Table 4 and Δ low /k B = 130 K.…”

“…Cubic boron nitride (cBN) with zinc blende structure is a wide band-gap (∼6.4 eV) semiconductor, industrially prepared as a crystalline superhard powder by the temperature gradient method, at high pressure and high temperature (HP-HT), in a variety of alkali or alkali-earth B-N solvents to which additives and/or catalysts are added. − Despite the cBN outstanding properties, − the presence, distribution, and atomic properties of the impurities incorporated in its crystal lattice are little known. The main reason is the extreme difficulty of preparing enough large (mm-sized), good quality single crystals with controlled impurity content, as required for physical investigations. − With recent advances in microanalysis and microstructural techniques using electron beams, , it is now possible to investigate the presence, nature, and aggregation state of the impurities incorporated in the submillimeter-sized cBN crystallites found in large-sized commercial superabrasive powders. Thus, recent studies by analytical high-resolution scanning transmission electron microscopy/transmission electron microscopy [a-(HR)­STEM/TEM], cathodoluminescence, ionoluminescence, and electron spin resonance (ESR) evidenced the presence and non-uniform distribution of certain impurities incorporated in the cBN crystallites. − As reported here, tin (Sn) is such an impurity, which we found in dark BORAZON CBN Type 1 crystallites.…”

Mg‐Facilitated Growth of Cubic Boron Nitride by Ion Beam‐Assisted Molecular Beam Epitaxy

“…Currently, there are no large‐area substrates of c‐BN, and reported sizes of bulk crystal c‐BN grown by the high‐pressure and high‐temperature (HPHT) method are in the range of a few millimeters. [ 3 ] Hence, non‐native substrates are required for the epitaxial growth of c‐BN. Diamond is an attractive choice as a substrate, as it also possesses a cubic crystal structure, is closely lattice‐matched to c‐BN ( Δa / a ≈ 1.3%), and would enable novel devices based on c‐BN/diamond heterostructures.…”

In situ synthesis of polycrystalline cubic boron nitride with high mechanical properties using rod-shaped TiB2 crystals as the binder

“…Cubic boron nitride (cBN) is usually used as a tool material for cutting hardened steel, cast iron or other intractable materials due to its series of excellent properties [1][2][3]. However, a pure cBN-sintered body is difficult to obtain, even when using high-temperature high-pressure (HTHP) techniques, [4] and is brittle because it is easily cleaved [5].…”