Synthesis of Highly Crystalline Needle-Like Silicon Nanowires for Enhanced Field Emission Applications

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.

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Effect of annealing temperature on the structural, morphological, photocatalytic and optical properties of the Cu-Ni co-doped TiO2 nanoparticles

Basir¹,

Supardan²,

Kamil³

2023

DJNB

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The effect of annealing temperature on the photocatalyst's structural, morphological, photocatalytic and optical properties have been extensively studied. In this work, the Cu-Ni co-doped TiO2 powder was prepared by the sol-gel technique and annealed at temperatures 400°C, 500°C, 600°C, 700°C, and 800°C. The structural phase of the Cu-Ni/TiO2 changed from anatase to rutile after the annealing temperature increased from 400°C to 800°C. The anatase phase was found at 400°C and 500°C, the mixed phase at 600 and 700°C, and the rutile phase at 800°C. The specific surface area and band gap of Cu-Ni/TiO2 were decreased with the increment of annealing temperatures from 70.00 to 24.89 m2 /g and 3.36 eV to 3.04 eV, respectively. Meanwhile, as the annealing temperature rises, the average particle size increases from 38.52 to 173.59 nm. The anatase-rutile mixed phase of Cu-Ni/TiO2 annealed at 600°C exhibited the highest photocatalytic degradation of methylene blue (MB) with 62.81% MB removal. Experimental results indicated that the annealing temperature could alter the structural, morphological, and optical properties of the Cu-Ni/TiO2, affecting the photocatalytic activity performance.

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Synthesis of Highly Crystalline Needle-Like Silicon Nanowires for Enhanced Field Emission Applications

Cited by 3 publications

References 29 publications

Defective WO_3−x nanowire: possible long lifetime semiconductor nanowire point electron source

Defective WO_3−x nanowire: possible long lifetime semiconductor nanowire point electron source

Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

Effect of annealing temperature on the structural, morphological, photocatalytic and optical properties of the Cu-Ni co-doped TiO2 nanoparticles

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Synthesis of Highly Crystalline Needle-Like Silicon Nanowires for Enhanced Field Emission Applications

Cited by 3 publications

References 29 publications

Defective WO3−x nanowire: possible long lifetime semiconductor nanowire point electron source

Defective WO3−x nanowire: possible long lifetime semiconductor nanowire point electron source

Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

Effect of annealing temperature on the structural, morphological, photocatalytic and optical properties of the Cu-Ni co-doped TiO2 nanoparticles

Contact Info

Product

Resources

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Defective WO_3−x nanowire: possible long lifetime semiconductor nanowire point electron source

Defective WO_3−x nanowire: possible long lifetime semiconductor nanowire point electron source