Synthesis of InN nanoparticles by rapid thermal ammonolysis

Abstract

A III group nitrides have attracted a great deal of attention in the last decades due to their applications in modern microelectronic and optoelectronic devices. In this paper, simple and controllable methods for a synthesis of InN nanoparticles in the form of nanodisks and skeletal nanostructures are presented. Careful control of the experimental conditions is necessary, as the thermal stability of InN at elevated temperatures is low. The morphology of nanoparticles was investigated by scanning electron microscopy and transmission electron microscopy combined with selected area diffraction. Profile analysis of powder X-ray diffraction data shows that the apparent size of the crystals along [001] direction decreases from the size larger than 100 nm for the low temperature syntheses to about 65 nm for the high temperature ones. Structural properties were investigated using X-ray diffraction, Raman, and photoluminescence spectroscopy. Thermal stability was probed by differential scanning calorimetry coupled with thermogravimetry in Ar and air atmospheres. Chemical composition and purity of InN are strongly dependent on temperature and duration of the synthesis.

Low-temperature chemical synthesis of nanostructured indium nitride from indium hydroxide

“…Up to now, considerable efforts have been made in synthesizing nanostructured InN through different synthetic methods such as pyrolysis of In(NH 2 ) 3 , 5) organometallic precursor routes, 6) high-pressure direct synthesis, 7) and high-temperature ammonolysis. 8) Takai et al have synthesized InN thin films by reactive magnetron sputtering. 9) InN thin films can also be obtained through a metalorganic vapor phase epitaxy.…”