Synthesis of large area AB stacked bilayer graphene by SiC epitaxy and transfer

Abstract

The dry transfer of AB stacked bilayer high quality SiC epitaxial graphene is presented. Monolayers were also transferred for comparison. Large continuous layers exceeding hundreds of microns were successfully transferred. Structural characterization, using Raman and TEM methods, are used to assess the uniformity and the quality of the transferred layers, in which case they are found to be of high quality and tight uniformity. The bilayer structural characterization methods indicate AB stacking with good uniformity and stacking order over large areas. Electrical characterization is used to extract mobility performance figures and other electrical characteristics for the transferred layers in which the bilayers distinctively show electrical characteristics akin to AB stacking in contrast to the transferred monolayers using the same methods. Contact resistance values as well as transfer length ratios are measured using TLM method and reported for bilayers. Finally, annealing studies show mobility enhancement for bilayers as well as potential application in gas sensing.

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

“…It should also be noted that the Dirac point tends to shift to the higher V g when the V sd increases. This unusual shift of Dirac voltage is due to the change of carrier density distribution along the conducting channel as the V sd varies. , In addition, the I sd also increases with increasing negative V g , indicating p-type doping of bilayer graphene. , In this case, the water molecules are suspected to be the main dopant of p-type doping in the air during the measurement process under ambient conditions. The adsorbed water molecules that act as electron acceptors on the graphene surface and at the SiO 2 –graphene interface would attract electrons from carbon atoms, thus generating major holes in the bilayer graphene.…”

“… 50 , 51 In addition, the I sd also increases with increasing negative V g , indicating p-type doping of bilayer graphene. 52 , 53 In this case, the water molecules are suspected to be the main dopant of p-type doping in the air during the measurement process under ambient conditions. The adsorbed water molecules that act as electron acceptors on the graphene surface and at the SiO 2 –graphene interface would attract electrons from carbon atoms, thus generating major holes in the bilayer graphene.…”

Self-heating controlled current-voltage and noise characteristics in graphene

“…This current study is conducted on devices fabricated and detailed in [25]. 6H-SiC wafers were cut into 1 × 1 cm 2 pieces and loaded into a cold wall furnace.…”

“…The carrier velocity in bilayer graphene was also calculated by the Monte Carlo method [23,24]. Monolayer and bilayer graphene can be epitaxially grown on SiC and dry transferred on SiO 2 [25]. Large continuous layers exceeding hundreds of microns can be transferred with this method.…”

Local Impact of Stone-Wales Defect on a Bilayer Graphene Nanoribbon FET

“…For example, BLGs on Ni−Cu gradient alloy and SiC substrates are developed to reach high quality and tight uniformity. 20,21 Besides controlling the number of layers with high uniformity in a large area and transferring it onto SiO 2 /Si substrate have been progressed and reported by some recent literature. 22,23 However, preparing BLGs with a prefect lattice structure is not strictly possible.…”