Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process

Recent Progress of Diamond Device toward Power Application

“…Another bottleneck of fabricating wafers is the "slice" technology of diamond, however the conventional laser cutting technique can not be applied to the size larger than 10x10mm 2 . This problem has been solved by the sophisticated technology of "slice free" direct wafer lift-off technique [4] using ion implantation, post-growth and wet etching. One of the advantages of using the substrates fabricated by this technology is that we can have the substrate "defect" data, prior to the fabrication of devices by "sister" wafer analysis.…”

Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD

“…This method could be applied to grow single-crystal diamond as well [2]. On the other hand, mainly in research activity aiming at semiconductor use of diamond, bulk diamond crystals [3][4][5][6][7][8][9][10][11][12] as well as the thin films [13] have been grown by using microwave (MW) plasma CVD. Compared with HF and DC-plasma CVD [14], MW plasma does not require electrodes near the top surface of the substrate in principle, and is believed to be a promising method to grow relatively high quality crystals.…”

A diamond 14 MeV neutron energy spectrometer with high energy resolution

“…Before CVD growth, the substrate was implanted with carbon ions at energy of 3 MeV and fluence of 2 × 10 16 #/cm 2 to fabricate a graphite layer for lift-off processing. 21,22 Then, CVD growth was done on the (001) direction using a microwave plasma reactor (ASTeX 5250; MKS Instruments, Inc.). We prepared two Hokkaido University's samples: HU#1 and HU#2.…”